IPB60R520CP

Mfr. #:: IPB60R520CP
Manufacturer:: Rochester Electronics, LLC
Description:: IGBT Transistors MOSFET N-Ch 600V 6.8A D2PAK-2 CoolMOS CP
Lifecycle:: New from this manufacturer.
Datasheet:: IPB60R520CP Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: INFINEON

Product Category: FETs - Single

Series: CoolMOS CP

Packaging: Reel

Part-Aliases: IPB60R520CPATMA1 SP000405868

Unit-Weight: 0.139332 oz

Mounting-Style: SMD/SMT

Tradename: CoolMOS

Package-Case: TO-252-3

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 66 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 16 ns

Rise-Time: 12 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 6.8 A

Vds-Drain-Source-Breakdown-Voltage: 600 V

Rds-On-Drain-Source-Resistance: 520 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 74 ns

Typical-Turn-On-Delay-Time: 17 ns

Channel-Mode: Enhancement

Tags: IPB60R, IPB60, IPB6, IPB

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R520CP Description

***et: Trans MOSFET N-CH 600V 6.8A 3-Pin(2+Tab) TO-263

***ark: MOSFET, N CHANNEL, 650V, 6.8A, TO-263

***i-Key: MOSFET N-CH 650V 6.8A TO-263

***ment14 APAC: MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):520mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:6.8A; Package / Case:TO-263; Power Dissipation Pd:66W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N, TO-263; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:6.8A; Napięcie drenu / źródła Vds:650V; Rezystancja przewodzenia Rds(on):0.47ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3V; Straty mocy Pd:66W; Rodzaj obudowy tranzystora:TO-263; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018); Maks. prąd Id:6.8A; Napięcie Vds, typ.:650V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs, maks.:20V; Rodzaj tranzystora:Mocy MOSFET; Temperatura robocza, min.:-55°C; Typ zakończenia:Do montażu powierzchniowego; Zakres temperatury roboczej:-55°C do +150°C

Market price

Part #	Mfg.	Description	Stock	Price
IPB60R520CPATMA1 DISTI # IPB60R520CPATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 6.8A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB60R520CPATMA1 DISTI # IPB60R520CPATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 6.8A TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPB60R520CPATMA1 DISTI # IPB60R520CPATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 6.8A TO-263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPB60R520CP DISTI # 33P7139	Infineon Technologies AG	MOSFET, N CHANNEL, 650V, 6.8A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:6.8A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.47ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	0
IPB60R520CP	Infineon Technologies AG	Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	12996	1000:$0.8100 500:$0.8500 100:$0.8900 25:$0.9200 1:$1.0000
IPB60R520CP DISTI # 726-IPB60R520CP	Infineon Technologies AG	MOSFET N-Ch 600V 6.8A D2PAK-2 CoolMOS CP RoHS: Compliant	132	1:$2.4100 10:$1.8600 100:$1.6900 250:$1.5200 500:$1.3100 1000:$1.1000 2000:$0.9190 5000:$0.8990

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	Mfr.#: IPB60R170CFD7ATMA1 OMO.#: OMO-IPB60R170CFD7ATMA1	MOSFET
	Mfr.#: IPB60R099CPATMA1 OMO.#: OMO-IPB60R099CPATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 31A D2PAK
	Mfr.#: IPB60R299CPAATMA1 OMO.#: OMO-IPB60R299CPAATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH TO263-3
	Mfr.#: IPB60R600P6ATMA1 OMO.#: OMO-IPB60R600P6ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH TO263-3
	Mfr.#: IPB60R199CPAXT OMO.#: OMO-IPB60R199CPAXT-1190	Trans MOSFET N-CH 600V 16A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R199CPAATMA1)

Availability

Stock:: Available
On Order:: 4500
Enter Quantity:

Current price of IPB60R520CP is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.08~~; ~~$1.08~~

10: ~~$1.03~~; ~~$10.26~~

100: ~~$0.97~~; ~~$97.20~~

500: ~~$0.92~~; ~~$459.00~~

1000: ~~$0.86~~; ~~$864.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB60R520CP

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes