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IXFH12N90P

IXFH12N90P
Mfr. #:
IXFH12N90P
Manufacturer:
Littelfuse
Description:
MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Lifecycle:
New from this manufacturer.
Datasheet:
IXFH12N90P Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH12N90P DatasheetIXFH12N90P Datasheet (P4)
ECAD Model:
More Information:
IXFH12N90P more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
900 V
Id - Continuous Drain Current:
12 A
Rds On - Drain-Source Resistance:
900 mOhms
Vgs th - Gate-Source Threshold Voltage:
6.5 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
56 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
380 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HiPerFET
Packaging:
Tube
Height:
21.46 mm
Length:
16.26 mm
Series:
IXFH12N90
Transistor Type:
1 N-Channel
Width:
5.3 mm
Brand:
IXYS
Forward Transconductance - Min:
8.2 S
Fall Time:
68 ns
Product Type:
MOSFET
Rise Time:
34 ns
Factory Pack Quantity:
30
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
50 ns
Typical Turn-On Delay Time:
32 ns
Unit Weight:
0.229281 oz
Tags
IXFH12N, IXFH12, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
MOSFET,N CH,900V,12A,TO-247
***nell
MOSFET,N CH,900V,12A,TO-247; Transistor Polarity:N Channel; Current Id Max:12A; Drain Source Voltage Vds:900V; On State Resistance:900mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:30V; Power Dissipation:380W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Part # Mfg. Description Stock Price
IXFH12N90P
DISTI # IXFH12N90P-ND		IXYS CorporationMOSFET N-CH 900V 12A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$6.1560
IXFH12N90P
DISTI # 83R9967		IXYS CorporationN CHANNEL POLAR POWER MOSFET, HiPerFET, 900V, 12A, TO247,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:900V,On Resistance Rds(on):0.9ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:3Pins RoHS Compliant: Yes30
  • 1:$8.7800
  • 10:$7.8500
  • 25:$6.8300
  • 50:$6.6900
  • 100:$6.4400
  • 250:$5.5000
  • 500:$5.2100
IXFH12N90P
DISTI # 747-IXFH12N90P		IXYS CorporationMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
RoHS: Compliant		55
  • 1:$8.7800
  • 10:$7.8500
  • 25:$6.8300
  • 50:$6.6900
  • 100:$6.4400
  • 250:$5.5000
  • 500:$5.2100
  • 1000:$4.4000
IXFH12N90P
DISTI # 1829759		IXYS CorporationMOSFET,N CH,900V,12A,TO-247
RoHS: Compliant		30
  • 1:£7.5500
  • 5:£6.9700
  • 10:£5.0100
IXFH12N90P
DISTI # 1829759		IXYS CorporationMOSFET,N CH,900V,12A,TO-247
RoHS: Compliant		30
  • 1:$13.9000
  • 10:$12.4300
  • 25:$10.8100
  • 50:$10.5900
  • 100:$10.2000
  • 250:$8.7100
  • 500:$8.2500
  • 1000:$6.9700
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Availability
Stock:
41
On Order:
2024
Enter Quantity:
Current price of IXFH12N90P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$8.78
$8.78
10
$7.85
$78.50
25
$6.83
$170.75
50
$6.69
$334.50
100
$6.44
$644.00
250
$5.50
$1 375.00
500
$5.21
$2 605.00
1000
$4.40
$4 400.00
2500
$3.77
$9 425.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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