PartNumber | IXFH100N30X3 | IXFH102N15T | IXFH100N25P |
Description | MOSFET DISCMSFT NCHULTRJNCTN X3CLASS | MOSFET 102 Amps 0V | MOSFET 100 Amps 250V 0.027 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Tradename | HiPerFET | HiPerFET | HiPerFET |
Packaging | Tube | - | Tube |
Brand | IXYS | IXYS | IXYS |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Technology | - | Si | Si |
Mounting Style | - | Through Hole | Through Hole |
Package / Case | - | TO-247-3 | TO-247-3 |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 150 V | 250 V |
Id Continuous Drain Current | - | 102 A | 100 A |
Configuration | - | Single | Single |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Unit Weight | - | 0.056438 oz | 0.229281 oz |
Rds On Drain Source Resistance | - | - | 27 mOhms |
Vgs th Gate Source Threshold Voltage | - | - | 5 V |
Vgs Gate Source Voltage | - | - | 20 V |
Qg Gate Charge | - | - | 185 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 600 W |
Channel Mode | - | - | Enhancement |
Height | - | - | 21.46 mm |
Length | - | - | 16.26 mm |
Series | - | - | IXFH100N25P |
Type | - | - | PolarHT HiPerFET Power MOSFET |
Width | - | - | 5.3 mm |
Forward Transconductance Min | - | - | 40 S |
Fall Time | - | - | 28 ns |
Rise Time | - | - | 26 ns |
Typical Turn Off Delay Time | - | - | 100 ns |
Typical Turn On Delay Time | - | - | 25 ns |