IXFH12N80P

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

12 A

Rds On - Drain-Source Resistance:

850 mOhms

Vgs - Gate-Source Voltage:

30 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

360 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Series:

IXFH12N80

Transistor Type:

1 N-Channel

Brand:

IXYS

Forward Transconductance - Min:

18 S

Fall Time:

25 ns

Product Type:

MOSFET

Rise Time:

26 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

70 ns

Typical Turn-On Delay Time:

23 ns

Unit Weight:

0.229281 oz

Tags

IXFH12N, IXFH12, IXFH1, IXFH, IXF