PartNumber | IXFH12N100F | IXFH12N100P | IXFH12N100 |
Description | MOSFET 12 Amps 1000V 1.05 Rds | MOSFET 12 Amps 1000V | MOSFET 1KV 12A |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | 1 kV |
Id Continuous Drain Current | 12 A | 12 A | 12 A |
Rds On Drain Source Resistance | 1.05 Ohms | 1.05 Ohms | 1.05 Ohms |
Vgs Gate Source Voltage | 20 V | 10 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 300 W | 463 W | 300 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Height | 21.46 mm | 21.46 mm | 21.46 mm |
Length | 16.26 mm | 16.26 mm | 16.26 mm |
Series | HiPerRF | IXFH12N100P | IXFH12N100 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.3 mm | 5.3 mm | 5.3 mm |
Brand | IXYS | IXYS | IXYS |
Fall Time | 12 ns | 36 ns | 32 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 9.8 ns | 25 ns | 33 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 31 ns | 60 ns | 62 ns |
Typical Turn On Delay Time | 12 ns | 30 ns | 21 ns |
Unit Weight | 0.229281 oz | 0.229281 oz | 0.229281 oz |
Vgs th Gate Source Threshold Voltage | - | 3.5 V | - |
Qg Gate Charge | - | 80 nC | - |
Tradename | - | HiPerFET | HyperFET |
Type | - | Polar HiPerFET Power MOSFET | - |
Forward Transconductance Min | - | 4.8 S | 10 S |