PartNumber | IXFH46N65X2 | IXFH50N20 | IXFH4N100Q |
Description | MOSFET MOSFET 650V/46A Ultra Junction X2 | MOSFET DIODE Id50 BVdass200 | MOSFET 4 Amps 1000V 2.8 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 200 V | 1 kV |
Id Continuous Drain Current | 46 A | 50 A | 4 A |
Rds On Drain Source Resistance | 76 mOhms | 45 mOhms | 3 Ohms |
Vgs th Gate Source Threshold Voltage | 2.7 V | - | - |
Vgs Gate Source Voltage | 30 V | 20 V | 20 V |
Qg Gate Charge | 75 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 660 W | 300 W | 150 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | HiPerFET | HyperFET | HyperFET |
Packaging | Tube | Tube | Tube |
Series | 650V Ultra Junction X2 | IXFH50N20 | IXFH4N100 |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 17 S | 32 S | - |
Fall Time | 6 ns | 16 ns | 18 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 16 ns | 15 ns | 15 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 47 ns | 72 ns | 32 ns |
Typical Turn On Delay Time | 34 ns | 18 ns | 17 ns |
Unit Weight | 0.056438 oz | 0.229281 oz | 0.229281 oz |
Height | - | 21.46 mm | 21.46 mm |
Length | - | 16.26 mm | 16.26 mm |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Width | - | 5.3 mm | 5.3 mm |