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IXFH4N100Q

IXFH4N100Q
Mfr. #:
IXFH4N100Q
Manufacturer:
Littelfuse
Description:
MOSFET 4 Amps 1000V 2.8 Rds
Lifecycle:
New from this manufacturer.
Datasheet:
IXFH4N100Q Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH4N100Q DatasheetIXFH4N100Q Datasheet (P4)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1 kV
Id - Continuous Drain Current:
4 A
Rds On - Drain-Source Resistance:
3 Ohms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
150 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HyperFET
Packaging:
Tube
Height:
21.46 mm
Length:
16.26 mm
Series:
IXFH4N100
Transistor Type:
1 N-Channel
Width:
5.3 mm
Brand:
IXYS
Fall Time:
18 ns
Product Type:
MOSFET
Rise Time:
15 ns
Factory Pack Quantity:
30
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
32 ns
Typical Turn-On Delay Time:
17 ns
Unit Weight:
0.229281 oz
Tags
IXFH4N100Q, IXFH4N, IXFH4, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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MOSFET, N CHANNEL, 800V, 58A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4
***rchild Semiconductor
SuperFET®II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology istailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Part # Mfg. Description Stock Price
IXFH4N100Q
DISTI # IXFH4N100Q-ND		IXYS CorporationMOSFET N-CH 1000V 4A TO-247AD
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.7810
IXFH4N100Q
DISTI # 747-IXFH4N100Q		IXYS CorporationMOSFET 4 Amps 1000V 2.8 Rds
RoHS: Compliant		0
  • 30:$7.0500
  • 60:$6.9100
  • 120:$6.6500
  • 270:$5.6800
  • 510:$5.3800
  • 1020:$4.5400
IXFH4N100Q
DISTI # XSFT00000027581		IXYS CorporationSINGLE N-CHANNEL 1000 V 150 W 82 NC THROUGH HOLEPOWER MOSFET - TO-247
RoHS: Compliant		660 in Stock0 on Order
  • 30:$6.6800
Image Part # Description
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IXFH40N20

Mfr.#: IXFH40N20

OMO.#: OMO-IXFH40N20-1190

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Mfr.#: IXFH42N20P

OMO.#: OMO-IXFH42N20P-1190

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IXFH46M65X2

Mfr.#: IXFH46M65X2

OMO.#: OMO-IXFH46M65X2-1190

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IXFH40N50Q

Mfr.#: IXFH40N50Q

OMO.#: OMO-IXFH40N50Q-IXYS-CORPORATION

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Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of IXFH4N100Q is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
30
$7.05
$211.50
60
$6.91
$414.60
120
$6.65
$798.00
270
$5.68
$1 533.60
510
$5.38
$2 743.80
1020
$4.54
$4 630.80
2520
$3.89
$9 802.80
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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