A2I20H080GNR1

A2I20H080GNR1
Mfr. #:
A2I20H080GNR1
Manufacturer:
NXP / Freescale
Description:
RF Amplifier A2I20H080GN/FM15F///REEL 13 Q2 DP
Lifecycle:
New from this manufacturer.
Datasheet:
A2I20H080GNR1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
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HTML Datasheet:
A2I20H080GNR1 DatasheetA2I20H080GNR1 Datasheet (P4-P6)A2I20H080GNR1 Datasheet (P7-P9)A2I20H080GNR1 Datasheet (P10-P12)A2I20H080GNR1 Datasheet (P13-P15)A2I20H080GNR1 Datasheet (P16-P18)A2I20H080GNR1 Datasheet (P19-P21)A2I20H080GNR1 Datasheet (P22)
ECAD Model:
More Information:
A2I20H080GNR1 more Information
Product Attribute
Attribute Value
Manufacturer:
NXP
Product Category:
RF Amplifier
Mounting Style:
SMD/SMT
Package / Case:
TO-270WB-15
Type:
RF LDMOS Wideband Integrated Power Amplifier
Operating Frequency:
1.8 GHz to 2.2 GHz
P1dB - Compression Point:
48.5 dBm
Gain:
27.8 dB
Operating Supply Voltage:
30 V
Test Frequency:
1.88 GHz
Operating Supply Current:
195 mA
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Reel
Brand:
NXP / Freescale
Number of Channels:
2 Channel
Product Type:
RF Amplifier
Factory Pack Quantity:
500
Subcategory:
Wireless & RF Integrated Circuits
Part # Aliases:
935313345528
Unit Weight:
0.056385 oz
Tags
A2I20H08, A2I20H, A2I20, A2I2, A2I
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
Amplifier,1800 to 2200 MHz, 70 W, Typ Gain in dB is 28.2 @ 1840 MHz, 30 V, LDMOS, SOT1722
***escale Semiconductor
AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS 1800-2200 MHz, 12.5 W AVG., 28 V
***hardson RFPD
RF & MW POWER AMPLIFIER
***et
Wideband IC LDMOS 1800-2200MHz 13.5W 30V Airfast
***i-Key
AIRFAST RF LDMOS WIDEBAND INTEGR
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
Part # Mfg. Description Stock Price
A2I20H080GNR1
DISTI # A2I20H080GNR1-ND
NXP SemiconductorsAIRFAST RF LDMOS WIDEBAND INTEGR
RoHS: Not compliant
Min Qty: 500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 500:$43.4128
A2I20H080GNR1
DISTI # A2I20H080GNR1
NXP SemiconductorsWideband IC LDMOS 1800-2200MHz 13.5W 30V Airfast - Tape and Reel (Alt: A2I20H080GNR1)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 500:$43.1900
  • 1000:$41.4900
  • 2000:$39.8900
  • 3000:$38.3900
  • 5000:$37.6900
A2I20H080GNR1
DISTI # 841-A2I20H080GNR1
NXP SemiconductorsRF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1800-2200 MHz, 12.5 W Avg., 30 V
RoHS: Compliant
0
  • 500:$43.4200
A2I20H080GNR1
DISTI # A2I20H080GNR1
NXP SemiconductorsRF & MW POWER AMPLIFIER
RoHS: Compliant
490
  • 1:$66.3000
  • 10:$59.9200
  • 25:$56.6500
Image Part # Description
A2I20H060NR1

Mfr.#: A2I20H060NR1

OMO.#: OMO-A2I20H060NR1

RF Amplifier A2I20H060N/FM15F///REEL 13 Q2 DP
A2I20H080NR1

Mfr.#: A2I20H080NR1

OMO.#: OMO-A2I20H080NR1

RF Amplifier A2I20H080N/FM15F///REEL 13 Q2 DP
A2I20H060GNR1

Mfr.#: A2I20H060GNR1

OMO.#: OMO-A2I20H060GNR1

RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V
A2I20H060GNR1

Mfr.#: A2I20H060GNR1

OMO.#: OMO-A2I20H060GNR1-NXP-SEMICONDUCTORS

RF Amplifier AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG, 28 V
A2I20H060NR1

Mfr.#: A2I20H060NR1

OMO.#: OMO-A2I20H060NR1-NXP-SEMICONDUCTORS

RF Amplifier AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG, 28 V
A2I20H080GNR1

Mfr.#: A2I20H080GNR1

OMO.#: OMO-A2I20H080GNR1-NXP-SEMICONDUCTORS

RF Amplifier AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS 1800-2200 MHz, 12.5 W AVG, 28 V
A2I20H060N:

Mfr.#: A2I20H060N:

OMO.#: OMO-A2I20H060N--1190

New and Original
A2I20H080N

Mfr.#: A2I20H080N

OMO.#: OMO-A2I20H080N-1190

New and Original
A2I20H080NQQ1633J

Mfr.#: A2I20H080NQQ1633J

OMO.#: OMO-A2I20H080NQQ1633J-1190

New and Original
A2I20H080NR1

Mfr.#: A2I20H080NR1

OMO.#: OMO-A2I20H080NR1-NXP-SEMICONDUCTORS

AIRFAST RF LDMOS WIDEBAND INTEGR
Availability
Stock:
Available
On Order:
1000
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Current price of A2I20H080GNR1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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