A2I20H080NR1 A2I20H080GNR1
5
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests
(1,2,3)
(In Freescale Doherty Production Test Fixture, 50 ohm system) V
DD
=30Vdc,I
DQ1A
=30mA,I
DQ2A
=195mA,
V
GS1B
=1.35Vdc,V
GS2B
=1.25Vdc,P
out
= 13.5 W Avg., f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain
G
ps
26.5 27.8 30.0 dB
Power Added Efficiency PAE 38.5 41.6 — %
Adjacent Channel Power Ratio ACPR — –31.6 –28.0 dBc
P
out
@ 3 dB Compression Point, CW P3dB 74.1 82.4 — W
Load Mismatch
(2,4)
(In Freescale Doherty Characterization Fixture, 50 ohm system) I
DQ1A
=30mA,I
DQ2A
= 195 mA, V
GS1B
=1.35Vdc,
V
GS2B
= 1.25 Vdc, f = 1840 MHz
VSWR 10:1 at 32 Vdc, 89 W CW Output Power
(3 dB Input Overdrive from 76 W CW Rated Power)
No Device Degradation
Typical Performance
(2,4)
(In Freescale Doherty Characterization Fixture, 50 ohm system) V
DD
=30Vdc,I
DQ1A
=30mA,I
DQ2A
= 195 mA,
V
GS1B
=1.35Vdc,V
GS2B
= 1.25 Vdc, 1805–1880 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW P1dB — 70 — W
P
out
@ 3 dB Compression Point
(5)
P3dB — 90 — W
AM/PM
(Maximum value measured at the P 3dB compression point across
the 1805–1880 MHz frequency range.)
— –22 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
res
— 160 — MHz
Quiescent Current Accuracy over Temperature
(6)
with2k Gate Feed Resistors (–30 to 85C) Stage 1
with2k Gate Feed Resistors (–30 to 85C) Stage 2
I
QT
—
—
1.0
2.0
—
—
%
Gain Flatness in 75 MHz Bandwidth @ P
out
= 13.5 W Avg. G
F
— 0.5 — dB
Gain Variation over Temperature
(–30Cto+85C)
G — 0.018 — dB/C
Output Power Variation over Temperature
(–30Cto+85C)
P1dB — 0.01 — dB/C
Table 6. Ordering Information
Device Tape and Reel Information Package
A2I20H080NR1
R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel
TO--270WB--15
A2I20H080GNR1 TO--270WBG--15
1. Part internally input matched.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
4. All data measured in fixture with device soldered to heatsink.
5. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal
where output PAR is compress e d to 7.0 dB @ 0.01% probability on CCDF.
6. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF
and search for AN1977 or AN1987.
