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IPD80R1K4CEATMA1

IPD80R1K4CEATMA1
Mfr. #:
IPD80R1K4CEATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 800V 3.9A DPAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
IPD80R1K4CEATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPD80R1K4CEATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
3.9 A
Rds On - Drain-Source Resistance:
1.4 Ohms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
23 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
63 W
Configuration:
Single
Tradename:
CoolMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
CoolMOS CE
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
12 ns
Product Type:
MOSFET
Rise Time:
15 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
72 ns
Typical Turn-On Delay Time:
25 ns
Part # Aliases:
IPD80R1K4CE SP001130972
Unit Weight:
0.139332 oz
Tags
IPD80R1K4C, IPD80R1K4, IPD80R1, IPD80R, IPD80, IPD8, IPD
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 1.4 Ohm 23 nC CoolMOS™ Power Mosfet - TO-252-3
***el Electronic
Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3
***ark
MOSFET, N-CH, 800V, 3.9A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 800V, 3.9A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 63W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
Part # Mfg. Description Stock Price
IPD80R1K4CEATMA1
DISTI # V72:2272_06383758		Infineon Technologies AGTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) DPAK T/R2450
  • 1000:$0.4802
  • 500:$0.5896
  • 250:$0.6425
  • 100:$0.6647
  • 25:$0.8239
  • 10:$0.8339
  • 1:$0.9540
IPD80R1K4CEATMA1
DISTI # IPD80R1K4CEATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 800V 3.9A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7146In Stock
  • 1000:$0.6069
  • 500:$0.7687
  • 100:$0.9912
  • 10:$1.2540
  • 1:$1.4200
IPD80R1K4CEATMA1
DISTI # IPD80R1K4CEATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 800V 3.9A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7146In Stock
  • 1000:$0.6069
  • 500:$0.7687
  • 100:$0.9912
  • 10:$1.2540
  • 1:$1.4200
IPD80R1K4CEATMA1
DISTI # IPD80R1K4CEATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 800V 3.9A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 2500:$0.5499
IPD80R1K4CEATMA1
DISTI # 26899231		Infineon Technologies AGTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) DPAK T/R2450
  • 1000:$0.5060
  • 500:$0.5901
  • 250:$0.6796
  • 100:$0.6814
  • 25:$0.8258
  • 15:$0.8408
IPD80R1K4CEATMA1
DISTI # IPD80R1K4CEATMA1		Infineon Technologies AGTrans MOSFET N-CH 800(Min)V 3.9A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R1K4CEATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5139
  • 5000:$0.4949
  • 10000:$0.4779
  • 15000:$0.4609
  • 25000:$0.4529
IPD80R1K4CEATMA1
DISTI # SP001130972		Infineon Technologies AGTrans MOSFET N-CH 800(Min)V 3.9A 3-Pin TO-252 T/R (Alt: SP001130972)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.7819
  • 5000:€0.6099
  • 10000:€0.5449
  • 15000:€0.4959
  • 25000:€0.4649
IPD80R1K4CEATMA1
DISTI # 13AC9051		Infineon Technologies AGMOSFET, N-CH, 800V, 3.9A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1:$1.1800
  • 10:$1.0000
  • 25:$0.9230
  • 50:$0.8450
  • 100:$0.7680
  • 250:$0.7240
  • 500:$0.6790
  • 1000:$0.5360
IPD80R1K4CEATMA1
DISTI # 726-IPD80R1K4CEATMA1		Infineon Technologies AGMOSFET N-Ch 800V 3.9A DPAK-243861
  • 1:$1.1800
  • 10:$1.0000
  • 100:$0.7680
  • 500:$0.6790
  • 1000:$0.5360
IPD80R1K4CEATMA1
DISTI # 2726058		Infineon Technologies AGMOSFET, N-CH, 800V, 3.9A, TO-252-3
RoHS: Compliant		1324
  • 1:$2.2500
  • 10:$1.9900
  • 100:$1.5700
IPD80R1K4CEATMA1
DISTI # C1S322000579253		Infineon Technologies AGMOSFETs
RoHS: Compliant		2450
  • 250:$0.6796
  • 100:$0.6814
  • 25:$0.8258
  • 10:$0.8408
IPD80R1K4CEATMA1
DISTI # XSFP00000152672		Infineon Technologies AGHalf Bridge Based MOSFET Driver, 0.35A, CMOS,PDSO14
RoHS: Compliant		21872
  • 2500:$1.1900
  • 21872:$1.0800
IPD80R1K4CEATMA1
DISTI # 2726058		Infineon Technologies AGMOSFET, N-CH, 800V, 3.9A, TO-252-3
RoHS: Compliant		1514
  • 5:£0.8500
  • 25:£0.7650
  • 100:£0.5870
  • 250:£0.5530
  • 500:£0.5190
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Availability
Stock:
43
On Order:
2026
Enter Quantity:
Current price of IPD80R1K4CEATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.17
$1.17
10
$1.00
$10.00
100
$0.77
$76.80
500
$0.68
$339.50
1000
$0.54
$536.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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