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IXBR42N170

IXBR42N170
Mfr. #:
IXBR42N170
Manufacturer:
Littelfuse
Description:
IGBT Transistors 57Amps 1700V
Lifecycle:
New from this manufacturer.
Datasheet:
IXBR42N170 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXBR42N170 DatasheetIXBR42N170 Datasheet (P4-P5)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
ISOPLUS 247-3
Mounting Style:
Through Hole
Series:
IXBR42N170
Packaging:
Tube
Brand:
IXYS
Product Type:
IGBT Transistors
Factory Pack Quantity:
30
Subcategory:
IGBTs
Tradename:
BIMOSFET
Unit Weight:
0.186952 oz
Tags
IXB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 1700V 57A 200W ISOPLUS247
***ical
Trans IGBT Chip N-CH 1700V 40A 250000mW 3-Pin(3+Tab) TO-247AD
***ure Electronics
IXBH Series 1700 Vce 40 A 38 ns t(on) Bipolar MOS Transistor - TO-247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IGBT 1700V 60A 250W TO247
***ical
High Voltage, High Gain Bipolar MOS Transistor
***S
new, original packaged
***el Nordic
Contact for details
***ical
Trans IGBT Chip N-CH 1700V 50A 250000mW 3-Pin(3+Tab) TO-247AD
***roFlash
Insulated Gate Bipolar Transistor, 50A I(C), 1700V V(BR)CES, N-Channel, TO-247AD
***ark
Igbt, Single, N-Ch, 1.7Kv, 50A, To-247; Dc Collector Current:50A; Collector Emitter Saturation Voltage Vce(On):2.5V; Power Dissipation Pd:250W; Collector Emitter Voltage V(Br)Ceo:1.7Kv; Transistor Case Style:to-247; No. Of Rohs Compliant: Yes
***p One Stop
Trans IGBT Chip N-CH 1200V 57A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH50S Series 1200 V 57 A N-Channel Standard Speed IGBT - TO-247AC
***ineon SCT
1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 1.7 V Current release time: 1000 ns Power dissipation: 200 W
***ment14 APAC
IGBT, 1200V, 57A, TO-247AC; Transistor Type:IGBT; DC Collector Current:57A; Collector Emitter Voltage Vces:1.47V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:57A; Current Temperature:25°C; Device Marking:IRG4PH50S; Fall Time Max:638ns; Full Power Rating Temperature:25°C; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:114A; Rise Time:29ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***p One Stop
Trans IGBT Chip N-CH 1200V 57A 200000mW Automotive 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
1200V DC-1 kHz (Standard) Discrete Automotive IGBT in a TO-247AC package, TO247-3, RoHS
***ineon
Benefits: Low Vce(on); Optimized for <1KHz switching applications; 150C operating temperature; AEC-Q101 qualified; Lead-free, RoHS compliant | Target Applications: PTC Heater
***nell
IGBT,N CH,1200V,57A,TO247AC; Transistor Type:IGBT; DC Collector Current:57A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:200mW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:200W
***(Formerly Allied Electronics)
1200V DC-1 KHZ (STANDARD) DISCRETE IGBT IN A TO-247AC PACKAGE W/ EXETENDED LEAD
***nell
IGBT, SINGLE, N-CH, 1.2KV, 57A, TO247AD; DC Collector Current: 57A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD;
***ark
Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:1200V; Continuous Collector Current, Ic:57A; Collector Emitter Saturation Voltage, Vce(sat):1.47V; Power Dissipation, Pd:200W ;RoHS Compliant: Yes
***ment14 APAC
SINGLE IGBT, 18V, 57A; Transistor Type:I; SINGLE IGBT, 18V, 57A; Transistor Type:IGBT; DC Collector Current:57A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +155°C; No. of Pins:3; Continuous Collector Current Ic:57A
Part # Mfg. Description Stock Price
IXBR42N170
DISTI # IXBR42N170-ND		IXYS CorporationIGBT 1700V 57A 200W ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$31.4160
IXBR42N170
DISTI # 747-IXBR42N170		IXYS CorporationIGBT Transistors 57Amps 1700V
RoHS: Compliant		0
  • 30:$28.5600
  • 60:$27.8700
  • 120:$26.5500
  • 270:$24.3600
Image Part # Description
IXBR42N170

Mfr.#: IXBR42N170

OMO.#: OMO-IXBR42N170

 IGBT Transistors 57Amps 1700V
IXBR42N170

Mfr.#: IXBR42N170

OMO.#: OMO-IXBR42N170-IXYS-CORPORATION

 IGBT Transistors 57Amps 1700V
Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of IXBR42N170 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
30
$28.56
$856.80
60
$27.87
$1 672.20
120
$26.55
$3 186.00
270
$24.36
$6 577.20
510
$23.19
$11 826.90
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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