SI4202DY-T1-GE3

SI4202DY-T1-GE3
Mfr. #:
SI4202DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs SO-8
Lifecycle:
New from this manufacturer.
Datasheet:
SI4202DY-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4202DY-T1-GE3 DatasheetSI4202DY-T1-GE3 Datasheet (P4-P6)SI4202DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:
SI4202DY-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
12.1 A
Rds On - Drain-Source Resistance:
14 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
17 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
3.7 W
Configuration:
Dual
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Series:
SI4
Transistor Type:
2 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
33 S
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
18 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
14 ns
Typical Turn-On Delay Time:
11 ns
Part # Aliases:
SI4202DY-GE3
Unit Weight:
0.017870 oz
Tags
SI4202DY-T, SI4202D, SI4202, SI420, SI42, SI4
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI4202DY-T1-GE3 Dual N-channel MOSFET Transistor; 12.1 A; 30 V; 8-Pin SOIC
***et Europe
Transistor MOSFET Array Dual N-CH 30V 12.1A 8-Pin SOIC T/R
***ure Electronics
Dual N-Channel 20 V 14 mOhm Surface Mount TrenchFET Power Mosfet - SOIC-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12.1A; On Resistance Rds(On):0.0115Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes
***ment14 APAC
MOSFET, NN CH, W/D, 30V, 12.1A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0115ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, N Channel:12.1A; Drain Source Voltage Vds, N Channel:30V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.0115ohm; Power Dissipation Pd:3.7W
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Part # Mfg. Description Stock Price
SI4202DY-T1-GE3
DISTI # V36:1790_09215544
Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC N T/R
RoHS: Compliant
0
  • 2500000:$0.6545
  • 1250000:$0.6547
  • 250000:$0.6723
  • 25000:$0.7009
  • 2500:$0.7056
SI4202DY-T1-GE3
DISTI # V72:2272_09215544
Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC N T/R
RoHS: Compliant
0
    SI4202DY-T1-GE3
    DISTI # SI4202DY-T1-GE3TR-ND
    Vishay SiliconixMOSFET 2N-CH 30V 12.1A 8SO
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    On Order
    • 12500:$0.5376
    • 5000:$0.5586
    • 2500:$0.5880
    SI4202DY-T1-GE3
    DISTI # SI4202DY-T1-GE3CT-ND
    Vishay SiliconixMOSFET 2N-CH 30V 12.1A 8SO
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 1000:$0.6489
    • 500:$0.8219
    • 100:$0.9950
    • 10:$1.2760
    • 1:$1.4300
    SI4202DY-T1-GE3
    DISTI # SI4202DY-T1-GE3DKR-ND
    Vishay SiliconixMOSFET 2N-CH 30V 12.1A 8SO
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 1000:$0.6489
    • 500:$0.8219
    • 100:$0.9950
    • 10:$1.2760
    • 1:$1.4300
    SI4202DY-T1-GE3
    DISTI # SI4202DY-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI4202DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape
    Americas - 0
    • 1250:$0.3897
    • 625:$0.4017
    • 313:$0.4144
    • 157:$0.4280
    • 79:$0.4425
    • 40:$0.4581
    • 1:$0.4747
    SI4202DY-T1-GE3
    DISTI # SI4202DY-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC N T/R (Alt: SI4202DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 0
    • 25000:€0.3119
    • 15000:€0.3349
    • 10000:€0.3629
    • 5000:€0.4219
    • 2500:€0.6179
    SI4202DY-T1-GE3
    DISTI # SI4202DY-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4202DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$0.3339
    • 15000:$0.3439
    • 10000:$0.3529
    • 5000:$0.3679
    • 2500:$0.3799
    SI4202DY-T1-GE3
    DISTI # SI4202DY-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC N T/R (Alt: SI4202DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Asia - 0
      SI4202DY-T1-GE3
      DISTI # 65T1692
      Vishay IntertechnologiesMOSFET Transistor, N Channel, 12.1 A, 30 V, 0.0115 ohm, 10 V, 1 V0
      • 10000:$0.5080
      • 6000:$0.5200
      • 4000:$0.5400
      • 2000:$0.6000
      • 1000:$0.6600
      • 1:$0.6880
      SI4202DY-T1-GE3.
      DISTI # 26AC3327
      Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:12.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0115ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:3.7W,No. of Pins:8Pins RoHS Compliant: Yes0
      • 10000:$0.5080
      • 6000:$0.5200
      • 4000:$0.5400
      • 2000:$0.6000
      • 1000:$0.6600
      • 1:$0.6880
      SI4202DY-T1-GE3
      DISTI # 70616176
      Vishay SiliconixSI4202DY-T1-GE3 Dual N-channel MOSFET Transistor,12.1 A,30 V,8-Pin SOIC
      RoHS: Compliant
      0
      • 100:$0.8200
      • 500:$0.7400
      • 1500:$0.6600
      • 2500:$0.6400
      SI4202DY-T1-GE3
      DISTI # 781-SI4202DY-T1-GE3
      Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
      RoHS: Compliant
      0
      • 1:$1.3900
      • 10:$1.1500
      • 100:$0.8830
      • 500:$0.7600
      • 1000:$0.5990
      • 2500:$0.5590
      • 5000:$0.5310
      • 10000:$0.5120
      SI4202DY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
      RoHS: Compliant
      Americas -
        Image Part # Description
        SI4202DY-T1-GE3

        Mfr.#: SI4202DY-T1-GE3

        OMO.#: OMO-SI4202DY-T1-GE3

        MOSFET 30V Vds 20V Vgs SO-8
        SI4202DY-T1-GE3-CUT TAPE

        Mfr.#: SI4202DY-T1-GE3-CUT TAPE

        OMO.#: OMO-SI4202DY-T1-GE3-CUT-TAPE-1190

        New and Original
        SI4202DY

        Mfr.#: SI4202DY

        OMO.#: OMO-SI4202DY-1190

        New and Original
        SI4202DY-T1-E3

        Mfr.#: SI4202DY-T1-E3

        OMO.#: OMO-SI4202DY-T1-E3-1190

        New and Original
        SI4202DY-T1-GE3

        Mfr.#: SI4202DY-T1-GE3

        OMO.#: OMO-SI4202DY-T1-GE3-VISHAY

        MOSFET 2N-CH 30V 12.1A 8SO
        Availability
        Stock:
        Available
        On Order:
        3000
        Enter Quantity:
        Current price of SI4202DY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $1.39
        $1.39
        10
        $1.15
        $11.50
        100
        $0.88
        $88.30
        500
        $0.76
        $380.00
        1000
        $0.60
        $599.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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