FDP8447L

Mfr. #:: FDP8447L
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET 40V N-CH PowerTrench MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: FDP8447L Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: FDP8447L more Information

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 40 V

Id - Continuous Drain Current:: 12 A

Rds On - Drain-Source Resistance:: 8.7 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: PowerTrench

Packaging:: Tube

Height:: 16.3 mm

Length:: 10.67 mm

Series:: FDP8447L

Transistor Type:: 1 N-Channel

Width:: 4.7 mm

Brand:: ON Semiconductor / Fairchild

Fall Time:: 4 ns

Product Type:: MOSFET

Rise Time:: 7 ns

Factory Pack Quantity:: 800

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 28 ns

Typical Turn-On Delay Time:: 9 ns

Unit Weight:: 0.063493 oz

Tags: FDP84, FDP8, FDP

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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FDP8447L Description

***ical: Trans MOSFET N-CH Si 40V 12A 3-Pin(3+Tab) TO-220AB Rail

***ure Electronics: N-Channel 40 V 8.7 mOhm PowerTrench® Mosfet - TO-220

***emi: N-Channel PowerTrench® MOSFET 40V, 50A, 8.7mΩ

*** Stop Electro: Power Field-Effect Transistor, 50A I(D), 40V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: N-CHANNEL POWERTRENCH MOSFET; Transistor Type:MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.

***ment14 APAC: MOSFET, N CH, 40V, 50A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Package / Case:TO-220; Power Dissipation Pd:2W; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***ark: MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 30V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3709; Current Id Max:87A; N-channel Gate Charge:17nC; Package / Case:TO-220AB; Power Dissipation Pd:79W; Power Dissipation Pd:79mW; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V

***p One Stop Global: Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 3-TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:75W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:75W; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***i-Key: MOSFET N-CH 30V 75A TO220AB

***ser: MOSFETs- Power and Small Signal 30V 75A N-Channel

***el Electronic: 20V PCH+PCH MIDDLE POWER MOSFET,

***et: Trans MOSFET N-CH 30V 75A 3-Pin(3+Tab) TO-220AB Rail

***ser: MOSFETs- Power and Small Signal 30V 75A N-Channel No-Cancel/No-Return

***el Electronic: MOSFET N-CH 30V 75A TO220AB

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.009Ohm;ID 100A;TO-220AB;PD 170W;VGS +/-20V

***eco: Transistor MOSFET Negative Channel 40 Volt 100A 3-Pin(3+Tab) TO-220AB

***ure Electronics: Single N-Channel 40 V 0.009 Ohm 93 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 40V 100A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 40V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; No. of Transistors:1; On State resistance @ Vgs = 10V:9mohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:400A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 40 V 3.3 mOhm 62 nC HEXFET® Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH Si 40V 123A 3-Pin(3+Tab) TO-220AB Tube

*** Stop Electro: Power Field-Effect Transistor, 120A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N-CH, 40V, 118A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:99W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

FDP8447L More Information

Fairchild PowerTrench MOSFETs

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

Part #	Mfg.	Description	Stock	Price
FDP8447L DISTI # FDP8447L-ND	ON Semiconductor	MOSFET N-CH 40V 12A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	1020In Stock	1600:$0.6641 800:$0.7350 100:$1.0847 10:$1.3730 1:$1.5500
FDP8447L DISTI # FDP8447L	ON Semiconductor	Trans MOSFET N-CH 40V 12A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP8447L) RoHS: Compliant Min Qty: 1600 Container: Tube	Asia - 0
FDP8447L DISTI # FDP8447L	ON Semiconductor	Trans MOSFET N-CH 40V 12A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FDP8447L) RoHS: Compliant Min Qty: 1600 Container: Tube	Americas - 0	1600:$0.4569 3200:$0.4539 4800:$0.4479 8000:$0.4429 16000:$0.4319
FDP8447L DISTI # FDP8447L	ON Semiconductor	Trans MOSFET N-CH 40V 12A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP8447L) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€0.7759 10:€0.6889 25:€0.6199 50:€0.5639 100:€0.5169 500:€0.4769 1000:€0.4429
FDP8447L DISTI # 52M3195	ON Semiconductor	N CHANNEL MOSFET, 40V, 12A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,MSL:- RoHS Compliant: Yes	0	1:$1.4500 10:$1.1300 100:$0.8870 1000:$0.6050 2000:$0.6010 10000:$0.5690 24000:$0.5530 50000:$0.5410
FDP8447L DISTI # 512-FDP8447L	ON Semiconductor	MOSFET 40V N-CH PowerTrench MOSFET RoHS: Compliant	1402	1:$1.3300 10:$1.1300 100:$0.8660 500:$0.7650 1000:$0.6040
FDP8447L	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 50A I(D), 40V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	8000	1000:$0.7600 500:$0.8000 100:$0.8400 25:$0.8700 1:$0.9400

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FDP8447L

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes