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FDD10N20LZTM

FDD10N20LZTM
Mfr. #:
FDD10N20LZTM
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 200V N-Channel MOSFET, UniFET
Lifecycle:
New from this manufacturer.
Datasheet:
FDD10N20LZTM Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FDD10N20LZTM more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
7.6 A
Rds On - Drain-Source Resistance:
300 mOhms
Qg - Gate Charge:
12 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
56 W
Configuration:
Single
Packaging:
Reel
Height:
2.39 mm
Length:
6.73 mm
Series:
FDD10N20LZ
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
8 S
Product Type:
MOSFET
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Unit Weight:
0.009184 oz
Tags
FDD10N, FDD10, FDD1, FDD
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET,UniFETTM, Logic Level, 200 V, 7.6 A, 360 mΩ, DPAK
***ure Electronics
FDD10N20LZ Series 200 V 7.6 A 360 mOhm N-Channel UniFet Mosfet - DPAK-3
***ark
TAPE REEL/UNIFET1 200V N-CHANNEL MOSFET, DPAK, ZENER BUILT IN PRODUCT,
***r Electronics
Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N-CH, 200V, 7.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.6A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Available until stocks are exhausted Alternative available
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
N-Channel PowerTrench® MOSFETs
ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more
Part # Mfg. Description Stock Price
FDD10N20LZTM
DISTI # FDD10N20LZTMCT-ND		ON SemiconductorMOSFET N-CH 200V 7.6A DPAK-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4398In Stock
  • 1000:$0.4107
  • 500:$0.5073
  • 100:$0.6764
  • 10:$0.8690
  • 1:$0.9900
FDD10N20LZTM
DISTI # FDD10N20LZTMDKR-ND		ON SemiconductorMOSFET N-CH 200V 7.6A DPAK-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4398In Stock
  • 1000:$0.4107
  • 500:$0.5073
  • 100:$0.6764
  • 10:$0.8690
  • 1:$0.9900
FDD10N20LZTM
DISTI # FDD10N20LZTMTR-ND		ON SemiconductorMOSFET N-CH 200V 7.6A DPAK-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.3635
FDD10N20LZTM
DISTI # FDD10N20LZTM		ON SemiconductorTrans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD10N20LZTM)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.2539
  • 5000:$0.2519
  • 10000:$0.2489
  • 15000:$0.2459
  • 25000:$0.2399
FDD10N20LZTM
DISTI # FDD10N20LZTM		ON SemiconductorTrans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R (Alt: FDD10N20LZTM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.3579
  • 5000:€0.2929
  • 10000:€0.2679
  • 15000:€0.2479
  • 25000:€0.2299
FDD10N20LZTM
DISTI # FDD10N20LZTM		ON SemiconductorTrans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R (Alt: FDD10N20LZTM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 2500:$0.2650
  • 5000:$0.2548
  • 7500:$0.2453
  • 12500:$0.2366
  • 25000:$0.2284
  • 62500:$0.2208
  • 125000:$0.2172
FDD10N20LZTM
DISTI # 27T6420		ON SemiconductorUF 200V 360MOHM L DPAK / REEL0
  • 1:$0.3020
  • 2500:$0.3000
  • 10000:$0.2890
  • 25000:$0.2800
FDD10N20LZTM
DISTI # 46AC0763		ON SemiconductorMOSFET, N-CH, 200V, 7.6A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2182
  • 1:$1.0000
  • 10:$0.8210
  • 25:$0.7280
  • 50:$0.6500
  • 100:$0.5600
  • 250:$0.4950
  • 500:$0.3960
  • 1000:$0.3820
FDD10N20LZTM
DISTI # 512-FDD10N20LZTM		ON SemiconductorMOSFET 200V N-Channel MOSFET, UniFET
RoHS: Compliant		5208
  • 1:$0.8000
  • 10:$0.6610
  • 100:$0.4270
  • 1000:$0.3420
  • 2500:$0.2880
  • 10000:$0.2780
  • 25000:$0.2670
FDD10N20LZTMFairchild Semiconductor CorporationPower Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RoHS: Compliant		214732
  • 1000:$0.2900
  • 500:$0.3100
  • 100:$0.3200
  • 25:$0.3300
  • 1:$0.3600
FDD10N20LZTM
DISTI # 2825151		ON SemiconductorMOSFET, N-CH, 200V, 7.6A, TO-252-3
RoHS: Compliant		2182
  • 5:$1.2500
  • 25:$1.0700
  • 100:$0.7310
  • 250:$0.6000
  • 500:$0.4910
  • 1000:$0.4540
  • 5000:$0.4280
FDD10N20LZTM
DISTI # 2825151		ON SemiconductorMOSFET, N-CH, 200V, 7.6A, TO-252-3
RoHS: Compliant		2187
  • 5:£0.7300
  • 25:£0.6530
  • 100:£0.5040
  • 250:£0.4390
  • 500:£0.3730
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Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of FDD10N20LZTM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.80
$0.80
10
$0.66
$6.61
100
$0.43
$42.70
1000
$0.34
$342.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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