PartNumber | FDD10AN06A0 | FDD10AN06A0-F085 | FDD10N20LZTM |
Description | MOSFET 60V 50a .15 Ohms/VGS=1V | MOSFET 60V, 50A, 10.5mOhm Power Trench MOSFET | MOSFET 200V N-Channel MOSFET, UniFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | 200 V |
Id Continuous Drain Current | 50 A | 50 A | 7.6 A |
Rds On Drain Source Resistance | 9.4 mOhms | 9.4 mOhms | 300 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | + 150 C |
Pd Power Dissipation | 135 W | 135 W | 56 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | - |
Tradename | PowerTrench | - | - |
Packaging | Reel | Reel | Reel |
Height | 2.39 mm | 2.39 mm | 2.39 mm |
Length | 6.73 mm | 6.73 mm | 6.73 mm |
Series | FDD10AN06A0 | FDD10AN06_F085 | FDD10N20LZ |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Fall Time | 32 ns | 32 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 79 ns | 79 ns | - |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 32 ns | 32 ns | - |
Typical Turn On Delay Time | 8 ns | 8 ns | - |
Part # Aliases | FDD10AN06A0_NL | FDD10AN06A0_F085 | - |
Unit Weight | 0.009184 oz | 0.009184 oz | 0.009184 oz |
Vgs th Gate Source Threshold Voltage | - | 4 V | - |
Qg Gate Charge | - | 28 nC | 12 nC |
Qualification | - | AEC-Q101 | - |
Forward Transconductance Min | - | - | 8 S |