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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| FDD10N20LZTM DISTI # V36:1790_06301285 | ON Semiconductor | Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R | 0 | |
| FDD10N20LZTM DISTI # FDD10N20LZTMCT-ND | ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 105In Stock |
|
| FDD10N20LZTM DISTI # FDD10N20LZTMDKR-ND | ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 105In Stock |
|
| FDD10N20LZTM DISTI # FDD10N20LZTMTR-ND | ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| FDD10N20LZTM DISTI # FDD10N20LZTM | ON Semiconductor | Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R (Alt: FDD10N20LZTM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Asia - 0 |
|
| FDD10N20LZTM DISTI # FDD10N20LZTM | ON Semiconductor | Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: FDD10N20LZTM) RoHS: Not Compliant Min Qty: 834 Container: Bulk | Americas - 0 |
|
| FDD10N20LZTM DISTI # FDD10N20LZTM | ON Semiconductor | Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R (Alt: FDD10N20LZTM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| FDD10N20LZTM DISTI # FDD10N20LZTM | ON Semiconductor | Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD10N20LZTM) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| FDD10N20LZTM DISTI # 27T6420 | ON Semiconductor | UF 200V 360MOHM L DPAK / REEL | 0 |
|
| FDD10N20LZTM DISTI # 46AC0763 | ON Semiconductor | MOSFET, N-CH, 200V, 7.6A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes | 0 |
|
| FDD10N20LZTM DISTI # 512-FDD10N20LZTM | ON Semiconductor | MOSFET 200V N-Channel MOSFET, UniFET RoHS: Compliant | 3859 |
|
| FDD10N20LZTM | ON Semiconductor | Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 4350 |
|
| FDD10N20LZTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 16566 |
|
| FDD10N20LZTM DISTI # 2825151 | ON Semiconductor | MOSFET, N-CH, 200V, 7.6A, TO-252-3 RoHS: Compliant | 0 |
|
| FDD10N20LZTM DISTI # 2825151 | ON Semiconductor | MOSFET, N-CH, 200V, 7.6A, TO-252-3 RoHS: Compliant | 10 |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: FDD10N20LZTM OMO.#: OMO-FDD10N20LZTM |
MOSFET 200V N-Channel MOSFET, UniFET |
|
Mfr.#: FDD10N20LZTM |
MOSFET N-CH 200V 7.6A DPAK-3 |
|
Mfr.#: FDD10N20LZTM,FDD10N20LZ |
New and Original |