 |  | | |
| PartNumber | FDD10N20LZTM | FDD10N20LZ | FDD10N20LZTM,FDD10N20LZ |
| Description | MOSFET 200V N-Channel MOSFET, UniFET | ||
| Manufacturer | ON Semiconductor | FAIRCHILD | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 7.6 A | - | - |
| Rds On Drain Source Resistance | 300 mOhms | - | - |
| Qg Gate Charge | 12 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 56 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 2.39 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | FDD10N20LZ | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 8 S | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.009184 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDD10N20LZTM | MOSFET 200V N-Channel MOSFET, UniFET | |
| FDD10N20LZ | New and Original | ||
| FDD10N20LZTM,FDD10N20LZ | New and Original | ||
ON Semiconductor |
FDD10N20LZTM | MOSFET N-CH 200V 7.6A DPAK-3 |