IRFS4127TRLPBF

IRFS4127TRLPBF
Mfr. #:
IRFS4127TRLPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 200V 76A 23.2mOhm 100nC Qg
Lifecycle:
New from this manufacturer.
Datasheet:
IRFS4127TRLPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS4127TRLPBF DatasheetIRFS4127TRLPBF Datasheet (P4-P6)IRFS4127TRLPBF Datasheet (P7-P9)IRFS4127TRLPBF Datasheet (P10)
ECAD Model:
More Information:
IRFS4127TRLPBF more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
72 A
Rds On - Drain-Source Resistance:
22 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
100 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
375 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
79 S
Fall Time:
22 ns
Product Type:
MOSFET
Rise Time:
18 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
56 ns
Typical Turn-On Delay Time:
17 ns
Part # Aliases:
SP001557360
Unit Weight:
0.139332 oz
Tags
IRFS412, IRFS41, IRFS4, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRFS4127PBF N-channel MOSFET Transistor; 72 A; 200 V; 3-Pin D2PAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET Switch in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 200 V 22 mOhm 150 nC HEXFET® Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 200V 72A 3-Pin(2+Tab) D2PAK Tube
*** Stop Electro
Power Field-Effect Transistor, 72A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH 200V 72A D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 44A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.0186ohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs: 5V; Power D
*** Source Electronics
Trans MOSFET N-CH 150V 8A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 150V 79A D2PAK
***ure Electronics
N-Channel 150 V 0.075 Ohm Surface Mount PowerTrench Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ
***r Electronics
Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 40.2Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 40.2 OHM 1% 1/10W 0402
***ment14 APAC
MOSFET, N, SMD, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Transistor Case Style:TO-263AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:79A; Package / Case:TO-263AB; Power Dissipation Pd:310W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***eco
Transistor MOSFET Negative Channel 200 Volt 62A 3-Pin(2+Tab) D2PAK
***(Formerly Allied Electronics)
IRFS4227PBF N-channel MOSFET Transistor; 62 A; 200 V; 3-Pin D2PAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 200 V 26 mOhm 98 nC HEXFET® Power Mosfet - D2PAK
*** Source Electronics
Trans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 200V 62A D2PAK
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:62A; On Resistance Rds(On):0.022Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V Rohs Compliant: Yes
***icroelectronics
N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in D2PAK package
***ure Electronics
N-Channel 200 V 0.034 Ohm Surfacec Mount STripFET™ Power MosFet - D2PAK
***ical
Trans MOSFET N-CH 200V 75A 3-Pin(2+Tab) D2PAK T/R
***ark
MOSFET, N CH, 200V, 75A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:37A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***nell
MOSFET, N CH, 200V, 75A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 37A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 190W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 75A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 200V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
N-Channel 150 V 92 A 11 mOhm N-Channel Power Trench Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 150V, 92A, 11mΩ
***ment14 APAC
MOSFET, N-CH, 150V, 92A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:92A; Source Voltage Vds:150V; On Resistance
***r Electronics
Power Field-Effect Transistor, 92A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 3.3 k Ω 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 3.3K OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 150V, 92A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 92A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.00925ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 234W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Part # Mfg. Description Stock Price
IRFS4127TRLPBF
DISTI # IRFS4127TRLPBFCT-ND
Infineon Technologies AGMOSFET N-CH 200V 72A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
10020In Stock
  • 100:$2.9033
  • 10:$3.5410
  • 1:$3.9700
IRFS4127TRLPBF
DISTI # IRFS4127TRLPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 200V 72A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
10020In Stock
  • 100:$2.9033
  • 10:$3.5410
  • 1:$3.9700
IRFS4127TRLPBF
DISTI # IRFS4127TRLPBFTR-ND
Infineon Technologies AGMOSFET N-CH 200V 72A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
9600In Stock
  • 800:$2.0625
IRFS4127TRLPBF
DISTI # 30612574
Infineon Technologies AGTrans MOSFET N-CH 200V 72A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
726
  • 500:$2.4225
  • 100:$2.6520
  • 50:$3.0090
  • 10:$3.5700
  • 5:$5.6355
IRFS4127TRLPBF
DISTI # 30292077
Infineon Technologies AGTrans MOSFET N-CH 200V 72A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
43
  • 25:$2.3220
  • 10:$2.5840
  • 6:$2.6790
IRFS4127TRLPBF
DISTI # IRFS4127TRLPBF
Infineon Technologies AGTrans MOSFET N-CH 200V 72A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS4127TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 800:$1.3900
  • 1600:$1.2900
  • 3200:$1.2900
  • 4800:$1.1900
  • 8000:$1.1900
IRFS4127TRLPBF
DISTI # IRFS4127TRLPBF
Infineon Technologies AGTrans MOSFET N-CH 200V 72A 3-Pin(2+Tab) D2PAK T/R (Alt: IRFS4127TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Asia - 0
    IRFS4127TRLPBF
    DISTI # 13AC9156
    Infineon Technologies AGMOSFET, N-CH, 200V, 72A, TO-263AB,Transistor Polarity:N Channel,Continuous Drain Current Id:72A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0186ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes1607
    • 1:$3.3100
    • 10:$2.8200
    • 25:$2.6900
    • 50:$2.5700
    • 100:$2.4400
    • 250:$2.3200
    • 500:$2.0800
    • 1000:$1.7500
    IRFS4127TRLPBF
    DISTI # 70019748
    Infineon Technologies AGMOSFET,200V,76A,23.2 MOHM,100 NC QG,D2-PAK
    RoHS: Compliant
    0
    • 800:$5.5800
    IRFS4127TRLPBF
    DISTI # 942-IRFS4127TRLPBF
    Infineon Technologies AGMOSFET MOSFT 200V 76A 23.2mOhm 100nC Qg
    RoHS: Compliant
    8042
    • 1:$3.3100
    • 10:$2.8200
    • 100:$2.4400
    • 250:$2.3200
    • 500:$2.0800
    IRFS4127TRLPBFInternational Rectifier 841
      IRFS4127TRLPBF
      DISTI # 1301002P
      Infineon Technologies AGMOSFET HEXFET N-CH 200V 72A D2PAK, RL426
      • 10:£3.3750
      • 100:£2.9500
      • 500:£2.7600
      • 1000:£2.6050
      IRFS4127TRLPBF
      DISTI # C1S322000495377
      Infineon Technologies AGTrans MOSFET N-CH 200V 72A 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant
      43
      • 25:$2.2940
      • 10:$2.3700
      • 1:$2.6780
      IRFS4127TRLPBF
      DISTI # C1S322000495386
      Infineon Technologies AGTrans MOSFET N-CH 200V 72A 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant
      726
      • 500:$1.9000
      • 100:$2.0800
      • 50:$2.3600
      • 10:$2.8000
      • 1:$4.4200
      IRFS4127TRLPBF
      DISTI # 2725985
      Infineon Technologies AGMOSFET, N-CH, 200V, 72A, TO-263AB
      RoHS: Compliant
      1735
      • 1:£2.9400
      • 10:£2.2200
      • 100:£1.9300
      • 250:£1.8300
      • 500:£1.6300
      IRFS4127TRLPBF
      DISTI # 2725985
      Infineon Technologies AGMOSFET, N-CH, 200V, 72A, TO-263AB
      RoHS: Compliant
      1607
      • 1:$6.3400
      • 10:$5.6500
      • 100:$4.6300
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      Availability
      Stock:
      Available
      On Order:
      1988
      Enter Quantity:
      Current price of IRFS4127TRLPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $3.30
      $3.30
      10
      $2.81
      $28.10
      100
      $2.43
      $243.00
      250
      $2.31
      $577.50
      500
      $2.07
      $1 035.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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