A2T18S261W12NR3

A2T18S261W12NR3
Mfr. #:
A2T18S261W12NR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V
Lifecycle:
New from this manufacturer.
Datasheet:
A2T18S261W12NR3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
A2T18S261W12NR3 DatasheetA2T18S261W12NR3 Datasheet (P4-P6)A2T18S261W12NR3 Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
NXP
Product Category:
RF MOSFET Transistors
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
3 A
Vds - Drain-Source Breakdown Voltage:
- 500 mV, 65 V
Gain:
18.2 dB
Output Power:
56 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 125 C
Mounting Style:
SMD/SMT
Package / Case:
OM-880X-2L2L
Packaging:
Reel
Operating Frequency:
1805 MHz to 1880 MHz
Type:
RF Power MOSFET
Brand:
NXP / Freescale
Number of Channels:
1 Channel
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
250
Subcategory:
MOSFETs
Vgs - Gate-Source Voltage:
- 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage:
1.4 V
Part # Aliases:
935338749528
Unit Weight:
0.133886 oz
Tags
A2T18S2, A2T18S, A2T18, A2T1, A2T
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,1805 to 1880 MHz, 280 W, Typ Gain in dB is 18.2 @ 1880 MHz, 28 V, LDMOS,
*** Semiconductors SCT
Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V, FM4F, RoHS
***i-Key
AIRFAST RF POWER LDMOS TRANSISTO
Part # Mfg. Description Stock Price
A2T18S261W12NR3
DISTI # A2T18S261W12NR3-ND
NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 250:$67.6754
A2T18S261W12NR3
DISTI # A2T18S261W12NR3
Avnet, Inc.1.8GHz 260W OM880-2L2L - Tape and Reel (Alt: A2T18S261W12NR3)
RoHS: Compliant
Min Qty: 250
Container: Reel
Americas - 0
  • 2500:$64.6900
  • 1500:$65.8900
  • 1000:$68.3900
  • 500:$71.1900
  • 250:$74.0900
A2T18S261W12NR3
DISTI # 841-A2T18S261W12NR3
NXP SemiconductorsRF MOSFET Transistors A2T18S261W12N/FM4F///REEL 13 Q2 DP0
  • 250:$66.1600
A2T18S261W12NR3
DISTI # A2T18S261W12NR3
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
0
  • 250:$76.3300
Image Part # Description
A2T18S261W12NR3

Mfr.#: A2T18S261W12NR3

OMO.#: OMO-A2T18S261W12NR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V
A2T18S260-12SR3

Mfr.#: A2T18S260-12SR3

OMO.#: OMO-A2T18S260-12SR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1995 MHz, 50 W Avg., 28 V
A2T18S260W12NR3

Mfr.#: A2T18S260W12NR3

OMO.#: OMO-A2T18S260W12NR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V
A2T18S262W12NR3

Mfr.#: A2T18S262W12NR3

OMO.#: OMO-A2T18S262W12NR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V
A2T18S260W12NR3

Mfr.#: A2T18S260W12NR3

OMO.#: OMO-A2T18S260W12NR3-NXP-SEMICONDUCTORS

RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR, 1805-1880 MHz, 56 W AVG, 28 V
A2T18S260W12N

Mfr.#: A2T18S260W12N

OMO.#: OMO-A2T18S260W12N-1190

New and Original
A2T18S261W12N

Mfr.#: A2T18S261W12N

OMO.#: OMO-A2T18S261W12N-1190

New and Original
A2T18S262W12NR3

Mfr.#: A2T18S262W12NR3

OMO.#: OMO-A2T18S262W12NR3-NXP-SEMICONDUCTORS

AIRFAST RF POWER LDMOS TRANSISTO
A2T18S260-12SR3

Mfr.#: A2T18S260-12SR3

OMO.#: OMO-A2T18S260-12SR3-NXP-SEMICONDUCTORS

AIRFAST RF POWER LDMOS TRANSISTO
A2T18S261W12NR3

Mfr.#: A2T18S261W12NR3

OMO.#: OMO-A2T18S261W12NR3-NXP-SEMICONDUCTORS

AIRFAST RF POWER LDMOS TRANSISTO
Availability
Stock:
Available
On Order:
1500
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