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FDB5690

FDB5690
Mfr. #:
FDB5690
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 60V N-Channel Power Trench
Lifecycle:
New from this manufacturer.
Datasheet:
FDB5690 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDB5690 DatasheetFDB5690 Datasheet (P4-P5)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
32 A
Rds On - Drain-Source Resistance:
27 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 65 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
58 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
4.83 mm
Length:
10.67 mm
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
9.65 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
32 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
9 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns
Typical Turn-On Delay Time:
10 ns
Unit Weight:
0.050717 oz
Tags
FDB56, FDB5, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 32A 3-Pin (2+Tab) TO-263AB T/R
***et
N-Channel 60V 32A (Tc) 58W (Tc) Surface Mount D²PAK (TO-263AB)
***ser
MOSFETs 60V N-Channel Power Trench
***ter Electronics
60V, N-CH, POWER TRENCH, TO263
Part # Mfg. Description Stock Price
FDB5690
DISTI # FDB5690TR-ND		ON SemiconductorMOSFET N-CH 60V 32A TO-263AB
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Limited Supply - Call
    FDB5690
    DISTI # FDB5690CT-ND    		ON SemiconductorMOSFET N-CH 60V 32A TO-263AB
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDB5690
      DISTI # FDB5690DKR-ND      		ON SemiconductorMOSFET N-CH 60V 32A TO-263AB
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDB5690
        DISTI # 512-FDB5690        		ON SemiconductorMOSFET 60V N-Channel Power Trench
        RoHS: Compliant        		0
          FDB5690Fairchild Semiconductor CorporationPower Field-Effect Transistor, 32A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant          		19926
          • 1000:$1.5800
          • 500:$1.6600
          • 100:$1.7300
          • 25:$1.8100
          • 1:$1.9400
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          Availability
          Stock:
          Available
          On Order:
          2000
          Enter Quantity:
          Current price of FDB5690 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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