FDMD8530

Mfr. #:: FDMD8530
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET 30V Dual N-Channel PowerTrench MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: FDMD8530 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: Power-33-8

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 201 A

Rds On - Drain-Source Resistance:: 1.8 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 106 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 78 W

Configuration:: Dual

Channel Mode:: Enhancement

Tradename:: PowerTrench Power Clip

Packaging:: Reel

Height:: 0.8 mm

Length:: 3.3 mm

Series:: FDMD8530

Transistor Type:: 2 N-Channel

Width:: 3.3 mm

Brand:: ON Semiconductor / Fairchild

Forward Transconductance - Min:: 259 S

Fall Time:: 21 ns

Product Type:: MOSFET

Rise Time:: 13 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 71 ns

Typical Turn-On Delay Time:: 14 ns

Unit Weight:: 0.003346 oz

Tags: FDMD85, FDMD, FDM

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FDMD8530 Description

***et Japan: Transistor MOSFET Array Dual N-CH 30V 201A 8-Pin PQFN T/R

***emi: Dual N-Channel PowerTrench® MOSFET 30V, 201A, 1.25mΩ

***nell: MOSFET, DUAL N-CH, 30V, 201A, PQFN-8L; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 201A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 770µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vg

***r Electronics: Power Field-Effect Transistor, 201A I(D), 30V, 0.00125ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This device includes two 30V N-Channel MOSFETs in a dual power (5 mm X 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

***emi: N-Channel PowerTrench® SyncFET™ MOSFET 30V, 42A, 3.5mΩ

***ure Electronics: N-Channel 30 V 3.5 mOhm Surface Mount PowerTrench Mosfet - Power 56

***rchild Semiconductor: The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

***nell: MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:20A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.5V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:200A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8670S; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V

***Yang: Transistor MOSFET Array Dual N-CH 30V 40A 8-Pin PowerFLAT T/R - Tape and Reel

***ure Electronics: Dual N-Channel 30 V 18 mOhm SMT STripFET V Power MosFet - PowerFLAT 5x6

***icroelectronics: Automotive-grade dual N-channel 30 V, 0.016 Ohm typ., 11 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 double island package

***ark: Mosfet, Dual N Ch, 30V, 11A, Powerflat; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; On Resistance Rds(On):0.016Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ical: Trans MOSFET N-CH 25V 32A 8-Pin Power 56 T/R

***r Electronics: Power Field-Effect Transistor, 32A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***nell: MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: The FDMS7558S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rSyncFET Schottky Body Diode DS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

***ineon SCT: 25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

*** Source Electronics: Trans MOSFET N-CH 25V 44A 8-Pin PQFN EP T/R / MOSFET N-CH 25V 44A 8PQFN

***ineon: Benefits: Low RDS(ON) (less than 1.10 mOhms); Schottky Intrinsic Diode with Low Forward Voltage; Low Thermal Resistance to PCB (less than 1.0C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1, Industrial Qualification; FastIRFET | Target Applications: MultiPhase SyncFET; Point of Load SyncFET

***(Formerly Allied Electronics): IRLR7807ZTRPBF N-channel MOSFET Transistor; 43 A; 30 V; 3+Tab-Pin DPAK

***ure Electronics: Single N-Channel 30V 13.8 mOhm 7 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 30A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level

***nell: MOSFET, N-CH, 30V, 43A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 43A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Po

***ark: MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Cu

***(Formerly Allied Electronics): Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK 1212-8

***nell: MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

Market price

Part #	Mfg.	Description	Stock	Price
FDMD8530 DISTI # V72:2272_16119252	ON Semiconductor	30V DUAL N-CHANNEL POWERTRENCH	2980	1000:$0.8098 500:$0.9763 250:$1.0628 100:$1.1754 25:$1.3150 10:$1.4611 1:$1.7095
FDMD8530 DISTI # V36:1790_16119252	ON Semiconductor	30V DUAL N-CHANNEL POWERTRENCH	0	3000000:$0.6838 1500000:$0.6841 300000:$0.7109 30000:$0.7588 3000:$0.7669
FDMD8530 DISTI # FDMD8530CT-ND	ON Semiconductor	MOSFET 2N-CH 30V 35A RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4116In Stock	1000:$0.9205 500:$1.1110 100:$1.3522 10:$1.6820 1:$1.8700
FDMD8530 DISTI # FDMD8530DKR-ND	ON Semiconductor	MOSFET 2N-CH 30V 35A RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4116In Stock	1000:$0.9205 500:$1.1110 100:$1.3522 10:$1.6820 1:$1.8700
FDMD8530 DISTI # FDMD8530TR-ND	ON Semiconductor	MOSFET 2N-CH 30V 35A RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	6000:$0.8013 3000:$0.8321
FDMD8530 DISTI # 32625891	ON Semiconductor	30V DUAL N-CHANNEL POWERTRENCH	2980	8:$1.7095
FDMD8530 DISTI # FDMD8530	ON Semiconductor	Trans MOSFET N-CH 30V/30V 35A/35A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD8530) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 18000	30000:$0.7239 18000:$0.7429 12000:$0.7519 6000:$0.7619 3000:$0.7669
FDMD8530 DISTI # FDMD8530	ON Semiconductor	Trans MOSFET N-CH 30V/30V 35A/35A 8-Pin PQFN T/R (Alt: FDMD8530) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.6799 18000:€0.7289 12000:€0.7849 6000:€0.8499 3000:€1.0199
FDMD8530 DISTI # 84Y5828	ON Semiconductor	MOSFET, DUAL N-CH, 30V, 201A, PQFN-8L,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:201A,Drain Source Voltage Vds:30V,On Resistance Rds(on):770µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,PowerRoHS Compliant: Yes	1840	1000:$0.8610 500:$1.0400 250:$1.1200 100:$1.1900 50:$1.2900 25:$1.3900 10:$1.4800 1:$1.7500
FDMD8530. DISTI # 96AC0020	ON Semiconductor	FET 30V 1.25 MOHM PQFN56 ROHS COMPLIANT: YES	12000	30000:$0.7240 18000:$0.7430 12000:$0.7520 6000:$0.7620 1:$0.7670
FDMD8530 DISTI # 512-FDMD8530	ON Semiconductor	MOSFET 30V Dual N-Channel PowerTrench MOSFET RoHS: Compliant	5466	1:$1.7300 10:$1.4700 100:$1.1800 500:$1.0300 1000:$0.8520 3000:$0.7930 6000:$0.7640 9000:$0.7340
FDMD8530	ON Semiconductor	POWER FIELD-EFFECT TRANSISTOR	2
FDMD8530 DISTI # 2565204	ON Semiconductor	MOSFET, DUAL N-CH, 30V, 201A, PQFN-8L RoHS: Compliant	1435	1000:$1.4800 500:$1.7900 100:$2.2900 10:$2.8500 1:$3.1500
FDMD8530 DISTI # 2565204	ON Semiconductor	MOSFET, DUAL N-CH, 30V, 201A, PQFN-8L	1435	500:£0.7460 250:£0.8010 100:£0.8550 25:£1.0600 5:£1.1700

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Availability

Stock:: Available
On Order:: 1988
Enter Quantity:

Current price of FDMD8530 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.73~~; ~~$1.73~~

10: ~~$1.47~~; ~~$14.70~~

100: ~~$1.18~~; ~~$118.00~~

500: ~~$1.03~~; ~~$515.00~~

1000: ~~$0.85~~; ~~$852.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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