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RJH1BF6RDPQ-80#T2

RJH1BF6RDPQ-80#T2
Mfr. #:
RJH1BF6RDPQ-80#T2
Manufacturer:
Renesas Electronics
Description:
IGBT Transistors IGBT
Lifecycle:
New from this manufacturer.
Datasheet:
RJH1BF6RDPQ-80#T2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
RJH1BF6RDPQ-80#T2 DatasheetRJH1BF6RDPQ-80#T2 Datasheet (P4-P6)RJH1BF6RDPQ-80#T2 Datasheet (P7)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Renesas Electronics
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Packaging:
Tube
Brand:
Renesas Electronics
Moisture Sensitive:
Yes
Product Type:
IGBT Transistors
Factory Pack Quantity:
1
Subcategory:
IGBTs
Tags
RJH1BF6, RJH1BF, RJH1B, RJH1, RJH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 1.1KV 55A 3-Pin TO-247 Tube
***i-Key
IGBT 1100V 55A 227.2W TO247
*** Electronic Components
IGBT Transistors IGBT
***ical
Trans IGBT Chip N-CH 1.2KV 55A 3-Pin(3+Tab) TO-247AC
***ernational Rectifier
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
***ark
TUBE / 1200V 55.000A TO-247 ;ROHS COMPLIANT: YES
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***el Electronic
THERMISTOR NTC 10KOHM 3380K 0603
***ment14 APAC
IGBT,N CH,1200V,55A,TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:210W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:210W
***et
Trans IGBT Chip N-CH 1000V 55A 3-Pin TO-247AC Tube
***ark
G6.7, 1000V, 20A, TO-247AC, TUBE
***aconductors
Insulated Gate Bipolar Transistors
***el Electronic
DC DC Converters 3 (168 Hours) 1 14-SMD Module Surface Mount Non-Isolated PoL Module ITE (Commercial) -40°C~85°C 0.20Lx0.22W x 0.08 H 5.0mmx5.7mmx2.1mm DC/DC CONVERTR 0.8-5.3V 1.5A SMD
***et
Trans IGBT Chip N-CH 1000V 55A 3-Pin TO-247AD Tube
***ark
G6.7, 1000V, 20A, TO-247AD, TUBE
***el Electronic
FIXED IND 750NH 360MA 1.54 OHM
***ernational Rectifier
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package
***ical
Trans IGBT Chip N-CH 1.2KV 55A 3-Pin(3+Tab) TO-247AD
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
***el Electronic
Inductor Variable Wirewound 2500uH 5% 252KHz 25Q-Factor Automotive
***or
IRG7PH35 - DISCRETE IGBT WITHOUT
***p One Stop Global
Trans IGBT Chip N-CH 1200V 41A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
1200V ULTRAFAST 5-40 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PH40UPBF
***ure Electronics
IRG4PH40U Series 1200 V 21 A N-Channel UltraFast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.43 V Current release time: 180 ns Power dissipation: 160 W
***ment14 APAC
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40U; Fall Time Max:190ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ure Electronics
FGA20N120FTD Series 1200 V 40 A Field Stop Trench IGBT-TO-3PN
***ow.cn
Trans IGBT Chip N-CH 1200V 40A 298000mW 3-Pin(3+Tab) TO-3P Tube
***emi
IGBT, 1200V, 20A, Field Stop Trench
***ark
Igbt, 1.2Kv, 40A, 150Deg C, 298W Rohs Compliant: Yes
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors 1200V N-Chan Trench
***rchild Semiconductor
Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven.
Image Part # Description
RJH1BF6RDPQ-80#T2

Mfr.#: RJH1BF6RDPQ-80#T2

OMO.#: OMO-RJH1BF6RDPQ-80-T2

 IGBT Transistors IGBT
RJH1BF6RDPQ-80

Mfr.#: RJH1BF6RDPQ-80

OMO.#: OMO-RJH1BF6RDPQ-80-1190

 New and Original
Availability
Stock:
Available
On Order:
3500
Enter Quantity:
Current price of RJH1BF6RDPQ-80#T2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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