NTD6415AN-1G

Mfr. #:: NTD6415AN-1G
Manufacturer:: ON Semiconductor
Description:: MOSFET NFET IPAK 100V 22A 55MOHM
Lifecycle:: New from this manufacturer.
Datasheet:: NTD6415AN-1G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: NTD6415AN-1G Datasheet NTD6415AN-1G Datasheet (P4-P6)NTD6415AN-1G Datasheet (P7)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-247-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 23 A

Rds On - Drain-Source Resistance:: 55 mOhms

Vgs th - Gate-Source Threshold Voltage:: 4 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 29 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 83 W

Configuration:: Single

Product:: Power MOSFET

Transistor Type:: 1 N-Channel

Brand:: ON Semiconductor

Forward Transconductance - Min:: 13 S

Fall Time:: 37 ns

Product Type:: MOSFET

Rise Time:: 37 ns

Factory Pack Quantity:: 75

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 30 ns

Typical Turn-On Delay Time:: 10 ns

Unit Weight:: 0.139332 oz

Tags: NTD6415, NTD64, NTD6, NTD

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTD6415AN-1G Description

***(Formerly Allied Electronics): NTD6415AN-1G N-channel MOSFET Transistor; 23 A; 100 V; 3-Pin IPAK

***emi: Power MOSFET 100V 23A 55 mOhm Single N-Channel DPAK

***et: Trans MOSFET N-CH 100V 23A 3-Pin(3+Tab) IPAK Rail

***r Electronics: Power Field-Effect Transistor, 23A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***emi: Single N-Channel Power MOSFET 100V, 17A, 81mΩ

***et: Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) IPAK Rail

***ark: TUBE / NFET DPAK 100V 17A 81MOHM

***r Electronics: Power Field-Effect Transistor, 17A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***(Formerly Allied Electronics): MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;I-Pak (TO-251AA);PD 66W

***ineon SCT: -100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***ure Electronics: Single P-Channel 100 V 205 mOhm 58 nC HEXFET® Power Mosfet - IPAK

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):205mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes

***nell: MOSFET, P, I-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.205ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 66W; Transistor Case Style: TO-251AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: TO-251; Current Id Max: -13A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Length: 9.65mm; Lead Spacing: 2.28mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 52A; SMD Marking: IRFU5410PBF; Termination Type: Through Hole; Turn Off Time: 45ns; Turn On Time: 15ns; Voltage Vds Typ: -100V; Voltage Vgs Max: -4V; Voltage Vgs Rds on Measurement: -10V

***(Formerly Allied Electronics): MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ohm; ID 17A; I-Pak (TO-251AA); PD 79W

***ure Electronics: Single N-Channel 100 V 105 mOhm 34 nC HEXFET® Power Mosfet - IPAK

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***trelec: MOSFET Operating temperature: -55...+175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 79 W

***el Electronic: Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:15A; On Resistance Rds(On):0.105Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: Yes

***ment14 APAC: MOSFET, N, 100V, 15A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:100V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:52W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:17A; Junction to Case Thermal Resistance A:2.4°C/W; On State resistance @ Vgs = 10V:105mohm; Package / Case:IPAK; Power Dissipation Pd:52W; Power Dissipation Pd:52W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

***ure Electronics: Single N-Channel 100 V 39 mOhm 37 nC HEXFET® Power Mosfet - TO-251AA

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 100V, 31A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:100V; On Resistance Rds(on):39mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:31A; Junction to Case Thermal Resistance A:1.4°C/W; On State resistance @ Vgs = 10V:39ohm; Package / Case:IPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:125A; Termination Type:Through Hole; Turn Off Time:13ns; Turn On Time:27ns; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): NTD6416ANL-1G N-channel MOSFET Transistor; 19 A; 100 V; 3-Pin IPAK

***emi: Single N-Channel Logic Level Power MOSFET 100V, 19A, 74mΩ

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:71W ;RoHS Compliant: Yes

***i-Key: MOSFET N-CH 100V 16A TO-251AA

***ser: MOSFETs 16a, 100V N-Ch 0.090Ohm

***el Nordic: Contact for details

Market price

Part #	Mfg.	Description	Stock	Price
NTD6415AN-1G DISTI # V36:1790_16968330	ON Semiconductor	Trans MOSFET N-CH 100V 23A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	3525	2500:$0.2730 1000:$0.2829 500:$0.2940 100:$0.3050 25:$0.4360 1:$0.7700
NTD6415AN-1G DISTI # NTD6415AN-1GOS-ND	ON Semiconductor	MOSFET N-CH 100V 23A IPAK RoHS: Compliant Min Qty: 450 Container: Tube	Limited Supply - Call
NTD6415AN-1G DISTI # 26068904	ON Semiconductor	Trans MOSFET N-CH 100V 23A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	3525	2500:$0.2730 1000:$0.2830 500:$0.2940 100:$0.3050 25:$0.4360 9:$0.7700
NTD6415AN-1G DISTI # 70341316	ON Semiconductor	NTD6415AN-1G N-channel MOSFET Transistor,23 A,100 V,3-Pin IPAK RoHS: Compliant	0	10:$1.0600 20:$0.9100 50:$0.8000 100:$0.7200
NTD6415AN-1G	ON Semiconductor	RoHS: Not Compliant	750	1000:$0.4900 500:$0.5100 100:$0.5300 25:$0.5600 1:$0.6000
NTD6415AN-1G DISTI # 863-NTD6415AN-1G	ON Semiconductor	MOSFET NFET IPAK 100V 22A 55MOHM RoHS: Compliant	0
NTD6415AN-1G DISTI # 7192917P	ON Semiconductor	MOSFET N-CHANNEL 100V 23A IPAK, TU	239	20:£0.4050 40:£0.4000 100:£0.3950 500:£0.3900

Image	Part #	Description
	Mfr.#: NTD6416ANLT4G OMO.#: OMO-NTD6416ANLT4G	MOSFET NFET DPAK 100V 17A 106MO
	Mfr.#: NTD6415ANLT4G OMO.#: OMO-NTD6415ANLT4G	MOSFET 100V HD3E NCH
	Mfr.#: NTD6414AN-1G OMO.#: OMO-NTD6414AN-1G-ON-SEMICONDUCTOR	MOSFET N-CH 100V 32A IPAK
	Mfr.#: NTD6414ANT4G OMO.#: OMO-NTD6414ANT4G-ON-SEMICONDUCTOR	MOSFET N-CH 100V 32A DPAK
	Mfr.#: NTD6415AN OMO.#: OMO-NTD6415AN-1190	New and Original
	Mfr.#: NTD6415AN-1G OMO.#: OMO-NTD6415AN-1G-ON-SEMICONDUCTOR	MOSFET N-CH 100V 23A IPAK
	Mfr.#: NTD6415ANL OMO.#: OMO-NTD6415ANL-1190	New and Original
	Mfr.#: NTD6415ANT4G OMO.#: OMO-NTD6415ANT4G-ON-SEMICONDUCTOR	MOSFET N-CH 100V 23A DPAK
	Mfr.#: NTD6416AN-1G OMO.#: OMO-NTD6416AN-1G-ON-SEMICONDUCTOR	IGBT Transistors MOSFET NFET IPAK 100V 15A 86MOHM
	Mfr.#: NTD6416ANL-1G OMO.#: OMO-NTD6416ANL-1G-ON-SEMICONDUCTOR	IGBT Transistors MOSFET NFET DPAK 100V 15A 86MOHM

NTD6415AN-1G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes