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NTD6415AN-1G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 2
1 Publication Order Number:
NTD6415AN/D
NTD6415AN, NVD6415AN
N-Channel Power MOSFET
100 V, 23 A, 55 mW
Features
• Low R
DS(on)
• High Current Capability
• 100% Avalanche Tested
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
100 V
Gate−to−Source Voltage − Continuous V
GS
±20 V
Continuous Drain
Current R
q
JC
Steady
State
T
C
= 25°C
I
D
23
A
T
C
= 100°C 16
Power Dissipation
R
q
JC
Steady
State
T
C
= 25°C P
D
83 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
89 A
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Source Current (Body Diode) I
S
23 A
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 Vdc, V
GS
= 10 Vdc,
I
L(pk)
= 23 A, L = 0.3 mH, R
G
= 25 W)
E
AS
79 mJ
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Case (Drain) Steady State
R
q
JC
1.8
°C/W
Junction−to−Ambient (Note 1)
R
q
JA
39
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENTS
A = Assembly Location*
Y = Year
WW = Work Week
6415AN = Device Code
G = Pb−Free Package
DPAK
CASE 369AA
STYLE 2
AYWW
64
15ANG
4 Drain
3
Source
1
Gate
2
Drain
IPAK
CASE 369D
STYLE 2
4 Drain
1
Gate
2
Drain
3
Source
AYWW
64
15ANG
4
1
2
3
V
(BR)DSS
R
DS(on)
MAX
I
D
MAX
(Note 1)
100 V 55 mW @ 10 V 23 A
See detailed ordering and shipping information on page 5 o
f
this data sheet.
ORDERING INFORMATION
G
S
D
N−Channel
1
2
3
4
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
NTD6415AN, NVD6415AN
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
100 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
113 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 100 V
T
J
= 25°C 1.0 mA
T
J
= 125°C 100
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
2.0 4.0 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
7.6 mV/°C
Drain−to−Source On−Resistance R
DS(on)
V
GS
= 10 V, I
D
= 23 A 47 55
mW
Forward Transconductance g
FS
V
GS
= 5 V, I
D
= 10 A 13
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 25 V
700
pF
Output Capacitance C
OSS
110
Reverse Transfer Capacitance C
RSS
52
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 80 V, I
D
= 23 A
29
nC
Threshold Gate Charge Q
G(TH)
1.2
Gate−to−Source Charge Q
GS
5
Gate−to−Drain Charge Q
GD
14.6
Plateau Voltage V
GP
5.7 V
Gate Resistance R
G
2.3
W
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time t
d(on)
V
GS
= 10 V, V
DD
= 80 V,
I
D
= 23 A, R
G
= 6.1 W
10
ns
Rise Time t
r
37
Turn−Off Delay Time t
d(off)
30
Fall Time t
f
37
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 23 A
T
J
= 25°C 0.83 1.2
V
T
J
= 125°C 0.68
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 23 A
65
ns
Charge Time T
a
46
Discharge Time T
b
19
Reverse Recovery Charge Q
RR
176 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD6415AN, NVD6415AN
http://onsemi.com
3
0
10
20
30
40
012345
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
T
J
= 25°C
10 V
7.5 V
6.5 V
6.0 V
5.5 V
5.0 V
4.5 V
0
10
20
30
40
234567
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 2. Transfer Characteristics
V
DS
w 10 V
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
5678910
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
Figure 3. On−Region versus Gate Voltage
I
D
= 23 A
T
J
= 25°C
0.0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
8 101214161820222
4
T
J
= 125°C
T
J
= 175°C
V
GS
= 10 V
T
J
= 25°C
T
J
= −55°C
I
D
, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.5
1
1.5
2
2.5
3
−50 −25 0 25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
D
= 23 A
V
GS
= 10 V
10
100
1000
10000
10 20 30 40 50 60 70 80 90 10
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
T
J
= 125°C
T
J
= 150°C
V
GS
= 0 V
P1-P3P4-P6P7-P7

NTD6415AN-1G

Mfr. #:
Buy NTD6415AN-1G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET IPAK 100V 22A 55MOHM
Lifecycle:
New from this manufacturer.
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