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FGA6560WDF

FGA6560WDF
Mfr. #:
FGA6560WDF
Manufacturer:
ON Semiconductor / Fairchild
Description:
IGBT Transistors FS3TIGBT TO3PN 60A 650V
Lifecycle:
New from this manufacturer.
Datasheet:
FGA6560WDF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FGA6560WDF more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-3PN
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.8 V
Maximum Gate Emitter Voltage:
30 V
Continuous Collector Current at 25 C:
120 A
Pd - Power Dissipation:
306 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
FGA6560WDF
Packaging:
Tube
Continuous Collector Current Ic Max:
120 A
Brand:
ON Semiconductor / Fairchild
Gate-Emitter Leakage Current:
400 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
450
Subcategory:
IGBTs
Unit Weight:
0.225789 oz
Tags
FGA656, FGA65, FGA6, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Rail
***emi
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*** Electronic Components
IGBT Transistors FS3TIGBT TO3PN 60A 650V
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for Welder applications where low conduction and switching losses are essential.
***icroelectronics
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***DA Technology Co., Ltd.
Product Description Demo for Development.
*** Source Electronics
Trans IGBT Chip N-CH 650V 120A 600000mW 3-Pin(3+Tab) TO-3P Tube / IGBT 650V 120A 600W TO3P
***-Wing Technology
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***nell
IGBT, 650V, 120A, TO-3PN; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 600W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-3PN; No. of Pins: 3Pins;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
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Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3+Tab) TO-247 Tube
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Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 3.8pF 50volts C0G +/-0.1pF
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Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKW30N65EL5XKSA1
***ineon SCT
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz, PG-TO247-3, RoHS
***ineon
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
***ical
Trans IGBT Chip N-CH 650V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
TRANSISTOR, IGBT, 1.75KV, 100A, TO-247
***i-Key
IGBT TRENCH/FS 650V 100A TO247
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Insulated Gate Bipolar Transistor
***nell
TRANSISTOR, IGBT, 1.75KV, 100A, TO-247; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 595W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No.
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IGBT TRENCH/FS 650V 100A TO247-3
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
650V, 30A, TO-247-3 Low VCE(sat) IGBT in TRENCHSTOP 5 technology
***ark
Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IGW30N65L5XKSA1
***ineon SCT
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz, PG-TO247-3, RoHS
***ineon
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGA6560WDF 650V 60A Field Stop Trench IGBT
ON Semiconductor FGA6560 650V 60A Field Stop Trench IGBT uses novel field stop IGBT technology. This IGBT features high current capability, low saturation voltage, high input impedance, and fast switching. The FGA6560 IGBT offers the optimum performance for welder applications that require low conduction and switching losses.
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
Part # Mfg. Description Stock Price
FGA6560WDF
DISTI # V99:2348_06359255		ON SemiconductorTrans IGBT Chip N-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Rail406
  • 250:$3.5920
  • 100:$3.7590
  • 10:$4.2320
  • 1:$4.8190
FGA6560WDF
DISTI # FGA6560WDF-ND		ON SemiconductorIGBT 650V 120A 306W TO-3PN
RoHS: Compliant
Min Qty: 1
Container: Tube		383In Stock
  • 1350:$3.0650
  • 900:$3.6342
  • 450:$4.0501
  • 10:$5.2100
  • 1:$5.8000
FGA6560WDF
DISTI # 25845326		ON SemiconductorTrans IGBT Chip N-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Rail406
  • 250:$3.5920
  • 100:$3.7590
  • 10:$4.2320
  • 3:$4.8190
FGA6560WDF
DISTI # FGA6560WDF		ON SemiconductorTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3PN Tube - Rail/Tube (Alt: FGA6560WDF)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$2.6900
  • 900:$2.6900
  • 1800:$2.5900
  • 2700:$2.5900
  • 4500:$2.4900
FGA6560WDF
DISTI # 512-FGA6560WDF		ON SemiconductorIGBT Transistors FS3TIGBT TO3PN 60A 650V
RoHS: Compliant		49
  • 1:$5.5200
  • 10:$4.7000
  • 100:$4.0700
  • 250:$3.8600
FGA6560WDFFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor
RoHS: Compliant		31380
  • 1000:$3.4100
  • 500:$3.5900
  • 100:$3.7400
  • 25:$3.9000
  • 1:$4.2000
FGA6560WDF
DISTI # C1S541901510156		ON SemiconductorTrans IGBT Chip N-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Tube
RoHS: Compliant		406
  • 250:$3.5920
  • 100:$3.7590
  • 1:$4.8190
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Availability
Stock:
Available
On Order:
1986
Enter Quantity:
Current price of FGA6560WDF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$5.51
$5.51
10
$4.69
$46.90
100
$4.06
$406.00
250
$3.85
$962.50
500
$3.46
$1 730.00
1000
$2.91
$2 910.00
2500
$2.77
$6 925.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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