TK31J60W5,S1VQ

TK31J60W5,S1VQ
Mfr. #:
TK31J60W5,S1VQ
Manufacturer:
Toshiba
Description:
MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC
Lifecycle:
New from this manufacturer.
Datasheet:
TK31J60W5,S1VQ Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK31J60W5,S1VQ DatasheetTK31J60W5,S1VQ Datasheet (P4-P6)TK31J60W5,S1VQ Datasheet (P7-P9)TK31J60W5,S1VQ Datasheet (P10)
ECAD Model:
More Information:
TK31J60W5,S1VQ more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-3PN-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
30.8 A
Rds On - Drain-Source Resistance:
73 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.7 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
86 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
230 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
DTMOSIV
Height:
20 mm
Length:
15.5 mm
Series:
TK31J60W5
Transistor Type:
1 N-Channel
Width:
4.5 mm
Brand:
Toshiba
Fall Time:
8.5 ns
Product Type:
MOSFET
Rise Time:
32 ns
Factory Pack Quantity:
25
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
165 ns
Typical Turn-On Delay Time:
70 ns
Unit Weight:
0.245577 oz
Tags
TK31J60W5, TK31J, TK31, TK3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
X35 Pb-F Power Mosfet Transistor To-3Pn(Os) Moq=50 Pd=230W F=1Mhz
***ical
Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-3PN Bag/Tube
***et
DTMOSIV(WITH FAST DIODE)_600V_88MOHM MAX(VGS=10V)_TO-3P(N)
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
Part # Mfg. Description Stock Price
TK31J60W5,S1VQ
DISTI # V99:2348_13896177
Toshiba America Electronic ComponentsX35 PB-F POWER MOSFET TRANSIST25
  • 2500:$4.3250
  • 1000:$4.4540
  • 500:$5.0500
  • 250:$5.5120
  • 100:$5.9740
  • 25:$6.5600
  • 10:$7.1510
  • 1:$7.8660
TK31J60W5,S1VQ
DISTI # TK31J60W5S1VQ-ND
Toshiba America Electronic ComponentsMOSFET N-CH 600V 30.8A TO-3P(N)
RoHS: Compliant
Min Qty: 25
Container: Tube
Temporarily Out of Stock
  • 25:$7.9152
TK31J60W5,S1VQ
DISTI # 31315828
Toshiba America Electronic ComponentsX35 PB-F POWER MOSFET TRANSIST25
  • 25:$6.5490
  • 10:$7.1380
  • 2:$7.8510
TK31J60W5S1VQ
DISTI # TK31J60W5,S1VQ
Toshiba America Electronic ComponentsTrans MOSFET N 600V 30.8A 3-Pin SC-65 Bag - Rail/Tube (Alt: TK31J60W5,S1VQ)
RoHS: Compliant
Min Qty: 25
Container: Tube
Americas - 0
  • 25:$5.4900
  • 50:$5.0900
  • 100:$4.7900
  • 150:$4.5900
  • 250:$4.4900
TK31J60W5,S1VQ
DISTI # 757-TK31J60W5S1VQ
Toshiba America Electronic ComponentsMOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC
RoHS: Compliant
23
  • 1:$10.1000
  • 10:$9.0800
  • 25:$8.2800
  • 50:$8.0700
  • 100:$7.4700
  • 250:$6.8600
  • 500:$6.2600
  • 1000:$5.0000
TK31J60W5S1VQOToshiba America Electronic Components 60
    TK31J60W5,S1VQToshiba America Electronic ComponentsMOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC
    RoHS: Compliant
    Americas -
      TK31J60W5S1VQToshiba America Electronic ComponentsMOSFET N-CH 30.8A 230W FET 600V
      RoHS: Compliant
      Americas -
        TK31J60W5,S1VQ(O)
        DISTI # C1S751201082516
        Toshiba America Electronic ComponentsMOSFETs55
        • 50:$11.9000
        • 10:$14.2000
        • 5:$14.9000
        TK31J60W5,S1VQ
        DISTI # C1S751200875779
        Toshiba America Electronic ComponentsMOSFETs25
        • 25:$6.5490
        • 10:$7.1380
        • 1:$7.8510
        Image Part # Description
        UCC27531DBVR

        Mfr.#: UCC27531DBVR

        OMO.#: OMO-UCC27531DBVR

        Gate Drivers 2.5-5A 35VMX VDD FET & IGBT Sgl Gate Dvr
        UCC27531DBVR

        Mfr.#: UCC27531DBVR

        OMO.#: OMO-UCC27531DBVR-TEXAS-INSTRUMENTS

        Gate Drivers 2.5-5A 35VMX VDD FET & IGBT Sgl Gate Dv
        Availability
        Stock:
        Available
        On Order:
        3000
        Enter Quantity:
        Current price of TK31J60W5,S1VQ is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $10.10
        $10.10
        10
        $9.08
        $90.80
        25
        $8.28
        $207.00
        50
        $8.07
        $403.50
        100
        $7.47
        $747.00
        250
        $6.86
        $1 715.00
        500
        $6.26
        $3 130.00
        1000
        $5.00
        $5 000.00
        2500
        $4.78
        $11 950.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
        Start with
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