 |  | | |
| PartNumber | TK31J60W5,S1VQ | TK31J60W5 | TK31J60W5,S1VQ(O) |
| Description | MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-3PN-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 30.8 A | - | - |
| Rds On Drain Source Resistance | 73 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.7 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 86 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 230 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Height | 20 mm | - | - |
| Length | 15.5 mm | - | - |
| Series | TK31J60W5 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 8.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 32 ns | - | - |
| Factory Pack Quantity | 25 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 165 ns | - | - |
| Typical Turn On Delay Time | 70 ns | - | - |
| Unit Weight | 0.245577 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
TK31J60W5,S1VQ | MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC | |
| TK31J60W5,S1VQ | Darlington Transistors MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC | ||
| TK31J60W5S1VQ | MOSFET N-CH 30.8A 230W FET 600V | ||
| TK31J60W5S1VQO | New and Original | ||
| TK31J60W5 | New and Original | ||
| TK31J60W5,S1VQ(O) | New and Original | ||
| TK31J60W5S1VQ(O | New and Original | ||
| TK31J60W5S1VQ-ND | New and Original |