PartNumber | TK31J60W,S1VQ | TK31J60W5,S1VQ |
Description | MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC | MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC |
Manufacturer | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-3PN-3 | TO-3PN-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V |
Id Continuous Drain Current | 30.8 A | 30.8 A |
Rds On Drain Source Resistance | 88 mOhms | 73 mOhms |
Vgs Gate Source Voltage | 10 V | 30 V |
Qg Gate Charge | 105 nC | 86 nC |
Pd Power Dissipation | 230 W | 230 W |
Configuration | Single | Single |
Tradename | DTMOSIV | DTMOSIV |
Height | 20 mm | 20 mm |
Length | 15.5 mm | 15.5 mm |
Series | TK31J60W | TK31J60W5 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 4.5 mm | 4.5 mm |
Brand | Toshiba | Toshiba |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 25 | 25 |
Subcategory | MOSFETs | MOSFETs |
Unit Weight | 0.245577 oz | 0.245577 oz |
Vgs th Gate Source Threshold Voltage | - | 3.7 V |
Minimum Operating Temperature | - | - 55 C |
Maximum Operating Temperature | - | + 150 C |
Channel Mode | - | Enhancement |
Fall Time | - | 8.5 ns |
Rise Time | - | 32 ns |
Typical Turn Off Delay Time | - | 165 ns |
Typical Turn On Delay Time | - | 70 ns |