TK31J60W

TK31J60W,S1VQ vs TK31J60W5,S1VQ

 
PartNumberTK31J60W,S1VQTK31J60W5,S1VQ
DescriptionMOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nCMOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC
ManufacturerToshibaToshiba
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-3PN-3TO-3PN-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V
Id Continuous Drain Current30.8 A30.8 A
Rds On Drain Source Resistance88 mOhms73 mOhms
Vgs Gate Source Voltage10 V30 V
Qg Gate Charge105 nC86 nC
Pd Power Dissipation230 W230 W
ConfigurationSingleSingle
TradenameDTMOSIVDTMOSIV
Height20 mm20 mm
Length15.5 mm15.5 mm
SeriesTK31J60WTK31J60W5
Transistor Type1 N-Channel1 N-Channel
Width4.5 mm4.5 mm
BrandToshibaToshiba
Product TypeMOSFETMOSFET
Factory Pack Quantity2525
SubcategoryMOSFETsMOSFETs
Unit Weight0.245577 oz0.245577 oz
Vgs th Gate Source Threshold Voltage-3.7 V
Minimum Operating Temperature-- 55 C
Maximum Operating Temperature-+ 150 C
Channel Mode-Enhancement
Fall Time-8.5 ns
Rise Time-32 ns
Typical Turn Off Delay Time-165 ns
Typical Turn On Delay Time-70 ns
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TK31J60W,S1VQ MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC
TK31J60W5,S1VQ MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC
TK31J60W5,S1VQ Darlington Transistors MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC
TK31J60W,S1VQ Darlington Transistors MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC
TK31J60W5S1VQ MOSFET N-CH 30.8A 230W FET 600V
TK31J60W5S1VQO New and Original
TK31J60W,S1VQ(O) MOSFETs
TK31J60W,S1VQ(O New and Original
TK31J60W5 New and Original
TK31J60W5,S1VQ(O) New and Original
TK31J60W5S1VQ(O New and Original
TK31J60WS1VQ Trans MOSFET N 600V 30.8A 3-Pin SC-65 Tube - Rail/Tube (Alt: TK31J60W,S1VQ)
TK31J60WS1VQ(O New and Original
TK31J60W5S1VQ-ND New and Original
TK31J60WS1VQ-ND New and Original
TK31J60W New and Original
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