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TK31J60W5,S1VQ

P1-P3P4-P6P7-P9P10-P10
TK31J60W5
1
MOSFETs Silicon N-Channel MOS (DTMOS)
TK31J60W5
TK31J60W5
TK31J60W5
TK31J60W5
Start of commercial production
2012-10
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Switching Voltage Regulators
2.
2.
2.
2. Features
Features
Features
Features
(1) Fast reverse recovery time: t
rr
= 135 ns (typ.)
(2) Low drain-source on-resistance: R
DS(ON)
= 0.082 Ω (typ.)
by using Super Junction Structure : DTMOS
(3) Easy to control Gate switching
(4) Enhancement mode: V
th
= 3.0 to 4.5 V (V
DS
= 10 V, I
D
= 1.5 mA)
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
TO-3P(N)
1: Gate
2: Drain (Heatsink)
3: Source
4.
4.
4.
4. Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Mounting torque
(T
c
= 25)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
I
DR
I
DRP
T
ch
T
stg
TOR
Rating
600
±30
30.8
123
230
437
7.7
30.8
123
150
-55 to 150
0.8
Unit
V
A
W
mJ
A
Nm
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2013-12-26
Rev.5.0
TK31J60W5
2
5.
5.
5.
5. Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Max
0.543
50
Unit
/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: V
DD
= 90 V, T
ch
= 25 (initial), L = 12.9 mH, R
G
= 25 Ω, I
AR
= 7.7 A
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2013-12-26
Rev.5.0
TK31J60W5
3
6.
6.
6.
6. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
6.1.
6.1.
6.1.
6.1. Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
th
R
DS(ON)
Test Condition
V
GS
= ±30 V, V
DS
= 0 V
V
DS
= 600 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1.5 mA
V
GS
= 10 V, I
D
= 15.4 A
Min
600
3.0
Typ.
0.082
Max
±1
100
4.5
0.099
Unit
µA
V
Ω
6.2.
6.2.
6.2.
6.2. Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
Symbol
C
iss
C
rss
C
oss
C
o(er)
r
g
t
r
t
on
t
f
t
off
dv/dt
Test Condition
V
DS
= 300 V, V
GS
= 0 V, f = 100 kHz
V
DS
= 0 to 400 V, V
GS
= 0 V
V
DS
= OPEN, f = 1 MHz
See Figure 6.2.1
V
DD
= 0 to 400 V, I
D
= 7.7 A
Min
50
Typ.
3000
9.5
70
123
2
80
120
8.5
165
Max
Unit
pF
Ω
ns
V/ns
Fig.
Fig.
Fig.
Fig. 6.2.1
6.2.1
6.2.1
6.2.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
6.3.
6.3.
6.3.
6.3. Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
≈ 400 V, V
GS
= 10 V, I
D
= 30.8 A
Min
Typ.
105
24
65
Max
Unit
nC
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Diode dv/dt ruggedness
Symbol
V
DSF
t
rr
Q
rr
I
rr
dv/dt
Test Condition
I
DR
= 30.8 A, V
GS
= 0 V
I
DR
= 15.4 A, V
GS
= 0 V
-dI
DR
/dt = 100 A/µs
I
DR
= 15.4 A, V
GS
= 0 V, V
DD
= 400 V
Min
50
Typ.
135
0.6
10
Max
-1.7
220
Unit
V
ns
µC
A
V/ns
2013-12-26
Rev.5.0
P1-P3P4-P6P7-P9P10-P10

TK31J60W5,S1VQ

Mfr. #:
Buy TK31J60W5,S1VQ
Manufacturer:
Toshiba
Description:
MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC
Lifecycle:
New from this manufacturer.
Delivery:
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