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MSC080SMA120J

MSC080SMA120J
Mfr. #:
MSC080SMA120J
Manufacturer:
Microchip / Microsemi
Description:
MOSFET UNRLS, FG, SIC MOSFET, SOT-227
Lifecycle:
New from this manufacturer.
Datasheet:
MSC080SMA120J Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
MSC080SMA120J more Information
Product Attribute
Attribute Value
Manufacturer:
Microchip
Product Category:
MOSFET
RoHS:
Y
Technology:
SiC
Mounting Style:
Chassis Mount
Package / Case:
SOT-227-4
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1.2 kV
Rds On - Drain-Source Resistance:
100 mOhms
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Packaging:
Tube
Brand:
Microchip / Microsemi
Product Type:
MOSFET
Factory Pack Quantity:
1
Subcategory:
MOSFETs
Tags
MSC080S, MSC08, MSC0, MSC
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
Image Part # Description
MSC080SMA120J

Mfr.#: MSC080SMA120J

OMO.#: OMO-MSC080SMA120J

 MOSFET UNRLS, FG, SIC MOSFET, SOT-227
MSC080SMA120S

Mfr.#: MSC080SMA120S

OMO.#: OMO-MSC080SMA120S-1190

 Transistor MOSFET N-CH 1200V 35A 3-Pin D3PAK Tube (Alt: MSC080SMA120S)
MSC0805C-39NJ

Mfr.#: MSC0805C-39NJ

OMO.#: OMO-MSC0805C-39NJ-1190

 New and Original
MSC0805C-56NM

Mfr.#: MSC0805C-56NM

OMO.#: OMO-MSC0805C-56NM-1190

 New and Original
MSC0805C-R10J

Mfr.#: MSC0805C-R10J

OMO.#: OMO-MSC0805C-R10J-1190

 New and Original
MSC080SMA120B

Mfr.#: MSC080SMA120B

OMO.#: OMO-MSC080SMA120B-1190

 MOSFET N-CH 1200V TO247
Availability
Stock:
Available
On Order:
3000
Enter Quantity:
Current price of MSC080SMA120J is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$48.23
$48.23
5
$46.97
$234.85
10
$45.10
$451.00
25
$43.52
$1 088.00
50
$41.28
$2 064.00
100
$38.75
$3 875.00
250
$36.21
$9 052.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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