IPP040N06NAKSA1

IPP040N06NAKSA1
Mfr. #:
IPP040N06NAKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 80A TO220-3
Lifecycle:
New from this manufacturer.
Datasheet:
IPP040N06NAKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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HTML Datasheet:
IPP040N06NAKSA1 DatasheetIPP040N06NAKSA1 Datasheet (P4-P6)IPP040N06NAKSA1 Datasheet (P7-P9)
ECAD Model:
More Information:
IPP040N06NAKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
3.6 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.1 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
44 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
107 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Tube
Height:
15.65 mm
Length:
10 mm
Series:
OptiMOS 5
Transistor Type:
1 N-Channel
Width:
4.4 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
60 S
Fall Time:
9 ns
Product Type:
MOSFET
Rise Time:
16 ns
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
30 ns
Typical Turn-On Delay Time:
19 ns
Part # Aliases:
IPP040N06N IPP4N6NXK SP000959820
Unit Weight:
0.211644 oz
Tags
IPP040, IPP04, IPP0, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-220 Tube
***Components
MOSFET N-Channel 60V 80A OptiMOS TO263
***i-Key
MOSFET N-CH 60V 20A TO220-3
***ronik
N-CH 60V 80A 4mOhm TO220-3
***p One Stop Global
OPTIMOSTM POWER-TRANSISTOR
***ark
Mosfet, N-Ch, 60V, 80A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0036Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:107W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 60V, 80A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:80A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0036ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:107W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Part # Mfg. Description Stock Price
IPP040N06NAKSA1
DISTI # V99:2348_06383355
Infineon Technologies AGTrans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
206
  • 10000:$0.7310
  • 5000:$0.7571
  • 2500:$0.7836
  • 1000:$0.8292
  • 500:$0.9505
  • 100:$1.0758
  • 10:$1.3153
  • 1:$1.5323
IPP040N06NAKSA1
DISTI # IPP040N06NAKSA1-ND
Infineon Technologies AGMOSFET N-CH 60V 20A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
219In Stock
  • 1000:$0.9570
  • 500:$1.1550
  • 100:$1.4850
  • 10:$1.8480
  • 1:$2.0500
IPP040N06NAKSA1
DISTI # 30313608
Infineon Technologies AGTrans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
269
  • 500:$1.0176
  • 100:$1.1520
  • 16:$1.4400
IPP040N06NAKSA1
DISTI # 26197615
Infineon Technologies AGTrans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
206
  • 100:$1.0758
  • 10:$1.3153
IPP040N06NAKSA1
DISTI # IPP040N06NAKSA1
Infineon Technologies AGMV POWER MOS - Rail/Tube (Alt: IPP040N06NAKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.6909
  • 2000:$0.6659
  • 3000:$0.6419
  • 5000:$0.6199
  • 10000:$0.6089
IPP040N06NAKSA1
DISTI # 12AC9723
Infineon Technologies AGMOSFET, N-CH, 60V, 80A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0036ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes500
  • 1:$1.7700
  • 10:$1.5000
  • 100:$1.2000
  • 500:$1.0600
IPP040N06N
DISTI # 726-IPP040N06N
Infineon Technologies AGMOSFET N-Ch 60V 80A TO220-3
RoHS: Compliant
749
  • 1:$1.7000
  • 10:$1.4400
  • 100:$1.1600
  • 500:$1.0100
IPP040N06NAKSA1
DISTI # 726-IPP040N06NAKSA1
Infineon Technologies AGMOSFET N-Ch 60V 80A TO220-3
RoHS: Compliant
559
  • 1:$1.7700
  • 10:$1.5000
  • 100:$1.2000
  • 500:$1.0600
IPP040N06NAKSA1Infineon Technologies AGPower Field-Effect Transistor, 20A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
300
  • 1000:$0.7600
  • 500:$0.8000
  • 100:$0.8400
  • 25:$0.8700
  • 1:$0.9400
IPP040N06NAKSA1
DISTI # 8922144P
Infineon Technologies AGMOSFET N-CHANNEL 60V 80A OPTIMOS TO-220, TU55
  • 10:£1.0780
  • 25:£1.0440
  • 50:£1.0100
  • 100:£0.8700
IPP040N06NAKSA1
DISTI # 8922144
Infineon Technologies AGMOSFET N-CHANNEL 60V 80A OPTIMOS TO-220, PK130
  • 5:£1.3760
  • 10:£1.0780
  • 25:£1.0440
  • 50:£1.0100
  • 100:£0.8700
IPP040N06NAKSA1
DISTI # 2709863
Infineon Technologies AGMOSFET, N-CH, 60V, 80A, TO-220
RoHS: Compliant
500
  • 5:£1.0900
  • 25:£1.0200
  • 100:£0.8790
  • 250:£0.8450
  • 500:£0.8100
IPP040N06NAKSA1
DISTI # 2709863
Infineon Technologies AGMOSFET, N-CH, 60V, 80A, TO-220
RoHS: Compliant
500
  • 1:$3.2700
  • 10:$2.9500
  • 100:$2.3700
  • 500:$1.8500
  • 1000:$1.5300
IPP040N06NAKSA1
DISTI # C1S322000336366
Infineon Technologies AGTrans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
206
  • 100:$1.0758
  • 10:$1.3153
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Availability
Stock:
466
On Order:
2449
Enter Quantity:
Current price of IPP040N06NAKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.76
$1.76
10
$1.50
$15.00
100
$1.20
$120.00
500
$1.05
$525.00
1000
$0.87
$870.00
2500
$0.81
$2 027.50
5000
$0.78
$3 905.00
10000
$0.75
$7 500.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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