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IPP040N06NAKSA1

P1-P3P4-P6P7-P9
Type
IPP040N06N
OptiMOS
TM
Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
V
GS
=10 V, T
C
=25 °C
80 A
V
GS
=10 V, T
C
=100 °C
80
V
GS
=10 V, T
C
=25 °C,
R
thJA
=50K/W
20
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
320
Avalanche energy, single pulse
3)
E
AS
I
D
=80 A, R
GS
=25 W
70 mJ
Gate source voltage
V
GS
±20 V
3)
See figure 13 for more detailed information
Value
1)
J-STD20 and JESD22
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
V
DS
60
V
R
DS(on),max
mW
I
D
80
A
Q
OSS
44
nC
Q
G
(0V..10V)
38
nC
Product Summary
Type
Package
Marking
IPP040N06N
PG-TO220-3
040N06N
PG-TO220-3
Rev.2.2 page 1 2012-12-20
IPP040N06N
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Power dissipation
P
tot
T
C
=25 °C
107 W
T
A
=25 °C,
R
thJA
=50 K/W
3.0
Operating and storage temperature
T
j
, T
stg
-55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 1.4 K/W
Device on PCB
R
thJA
minimal footprint - - 62
6 cm² cooling area
4)
- - 40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=1 mA
60 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=50 µA
2.1 2.8 3.3
Zero gate voltage drain current
I
DSS
V
DS
=60 V, V
GS
=0 V,
T
j
=25 °C
- 0.5 1 µA
V
DS
=60 V, V
GS
=0 V,
T
j
=125 °C
- 10 100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- 10 100 nA
R
DS(on)
V
GS
=10 V, I
D
=80 A
- 3.6 4.0
mW
V
GS
=6 V, I
D
=20 A
- 4.7 6.0
Gate resistance
R
G
- 1.3 1.95
W
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=80 A
60 120 - S
Value
Values
Drain-source on-state resistance
Rev.2.2 page 2 2012-12-20
IPP040N06N
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
C
iss
- 2700 3375 pF
Output capacitance
C
oss
- 670 838
Reverse transfer capacitance
C
rss
- 28 56
Turn-on delay time
t
d(on)
- 19 - ns
Rise time
t
r
- 16 -
Turn-off delay time
t
d(off)
- 30 -
Fall time
t
f
- 9 -
Gate Charge Characteristics
5)
Gate to source charge
Q
gs
- 13 - nC
Gate charge at threshold
Q
g(th)
- 8 -
Gate to drain charge
Q
gd
- 7 9
Switching charge
Q
sw
- 13 -
Gate charge total
Q
g
- 38 44
Gate plateau voltage
V
plateau
- 4.9 - V
Gate charge total, sync. FET
Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 10 V
- 33 - nC
Output charge
Q
oss
V
DD
=30 V, V
GS
=0 V
- 44 -
Reverse Diode
Diode continuous forward current
I
S
- - 80 A
Diode pulse current
I
S,pulse
- - 320
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=80 A,
T
j
=25 °C
- 1.0 1.2 V
Reverse recovery time
t
rr
- 34 54 ns
Reverse recovery charge
Q
rr
- 34 - nC
5)
See figure 16 for gate charge parameter definition
V
R
=30 V, I
F
=80 A,
di
F
/dt=100 A/µs
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=30 V,
f=1 MHz
V
DD
=30 V, V
GS
=10 V,
I
D
=80 A, R
G,ext
=3 W
V
DD
=30 V, I
D
=80 A,
V
GS
=0 to 10 V
Rev.2.2 page 3 2012-12-20
P1-P3P4-P6P7-P9

IPP040N06NAKSA1

Mfr. #:
Buy IPP040N06NAKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 80A TO220-3
Lifecycle:
New from this manufacturer.
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