Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
IPP040N06NAKSA1
P1-P3
P4-P6
P7-P9
IPP040N06N
1 Power dissipation
2 Drain current
P
tot
=f(
T
C
)
I
D
=f(
T
C
);
V
GS
≥10 V
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
Z
thJC
=f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
1 µs
10 µs
100 µs
1 m
s
10 m
s
DC
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
I
D
[A]
V
DS
[V]
limited by on-state
resistance
single
pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
-2
10
-1
1
10
Z
thJC
[K/W]
t
p
[s]
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
tot
[W]
T
C
[
°
C]
0
20
40
60
80
100
0
25
50
75
100
125
150
175
200
I
D
[A]
T
C
[
°
C]
Rev.2.2
page 4
2012-12-20
IPP040N06N
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(
V
DS
);
T
j
=25 °C
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)ma
x
g
fs
=f(
I
D
);
T
j
=25 °C
parameter:
T
j
5 V
5.5 V
6 V
7 V
10 V
0
1
2
3
4
5
6
7
8
0
80
160
240
320
R
DS(on)
[m
W
]
I
D
[A]
25
°C
175
°C
0
40
80
120
160
200
240
280
320
0
2
4
6
8
I
D
[A]
V
GS
[V]
0
50
100
150
0
20
40
60
80
g
fs
[S]
I
D
[A]
5 V
5.5 V
6 V
7 V
10 V
0
40
80
120
160
200
240
280
320
0.0
0
.5
1
.0
1.5
2.0
2.5
3.0
I
D
[A]
V
DS
[V]
Rev.2.2
page 5
2012-12-20
IPP040N06N
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=80 A;
V
GS
=10 V
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
11 Typ. capacitances
12 Forward characteristics of reverse diode
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
I
F
=f(
V
SD
)
parameter:
T
j
typ
max
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
-
60
-
20
20
60
100
140
180
R
DS(on)
[m
W
]
T
j
[
°
C]
50 µA
500
m
A
0
1
2
3
4
5
-
60
-
20
20
60
100
140
180
V
GS(th)
[V]
T
j
[
°
C]
Ciss
Coss
Crss
10
1
10
2
10
3
10
4
10
100
1000
10000
0
20
40
60
C
[pF]
V
DS
[V]
25
°C
175
°C
10
0
10
1
10
2
10
3
0
0.5
1
1.5
2
I
F
[A
]
V
SD
[V]
Rev.2.2
page 6
2012-12-20
P1-P3
P4-P6
P7-P9
IPP040N06NAKSA1
Mfr. #:
Buy IPP040N06NAKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 80A TO220-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
IPP040N06NAKSA1