SI4455DY-T1-GE3

Mfr. #:: SI4455DY-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET -150V Vds 20V Vgs SO-8
Lifecycle:: New from this manufacturer.
Datasheet:: SI4455DY-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4455DY-T1-GE3 Datasheet SI4455DY-T1-GE3 Datasheet (P4-P6)SI4455DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:: SI4455DY-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Tradename:: TrenchFET

Packaging:: Reel

Series:: SI4

Brand:: Vishay / Siliconix

Product Type:: MOSFET

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Part # Aliases:: SI4455DY-GE3

Unit Weight:: 0.006596 oz

Tags: SI4455DY-T, SI4455D, SI4455, SI445, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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SI4455DY-T1-GE3 Description

***et: Trans MOSFET P-CH 150V 2A 8-Pin SOIC N T/R

***enic: 150V 2A 295m´Î@10V4A 3.1W 4V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS

***mal: P-Ch MOSFET SO-8 150V 295mohm @ 10V - Lead(Pb) and

***ark: P-CHANNEL 150-V (D-S) MOSFET ROHS COMPLIANT: YES

***ment14 APAC: MOSFET, P-CH, 150V, 2.8A, SOIC;

***el Electronic: MOSFET 150V 8.9A 5.9W 295mohm @ 10V

***roFlash: Small Signal Field-Effect Transistor, 2.8A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ponent Sense: FET P-CH IRF6216TRPBF -150V -2.2A 0.24

***et Japan: Transistor MOSFET Array Dual P-CH 30V 2.3A 8-Pin SOIC T/R

***ure Electronics: Dual P-Channel 30 V 0.4 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-2.3A; On Resistance, Rds(on):250mohm; Rds(on) Test Voltage, Vgs:-10V; Leaded Process Compatible:Yes RoHS Compliant: Yes

***trelec: Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = -2.3 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 250 / Gate-Source Voltage V = 20 / Fall Time ns = 6.9 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 9.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2

***icroelectronics: N-channel 150 V, 0.045 Ω, 5 A, SO-8 STripFET͐2;2; III Power MOSFET

***ical: Trans MOSFET N-CH 150V 5A 8-Pin SO N T/R

***r Electronics: Power Field-Effect Transistor, 5A I(D), 150V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***el Electronic: DIODE GEN PURP 600V 30A TO220F

***(Formerly Allied Electronics): IRF7815PBF N-channel MOSFET Transistor, 5.1 A, 150 V, 8-Pin SOIC | Infineon IRF7815PBF

***ark: Mosfet Transistor, N Channel, 5.1 A, 150 V, 0.034 Ohm, 10 V, 4 V

***ure Electronics: Single N-Channel 150 V 43 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***nell: MOSFET,W DIODE,N CH,150V,5.1A,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.1A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P

***roFlash: Power Field-Effect Transistor, 5.1A I(D), 150V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ure Electronics: N-Channel 200 V 0.240 Ohm 1.5 W Surface Mount Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R

***enic: 200V 1.7A 1.5W 240m´Î@10V2.2A 4V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS

***ical: Trans MOSFET P-CH 60V 2.6A 8-Pin SOIC N T/R

***S: French Electronic Distributor since 1988

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:2.6A; On Resistance, Rds(on):0.17ohm; Rds(on) Test Voltage, Vgs:-10V ;RoHS Compliant: Yes

***ure Electronics: Single N-Channel 150 V 0.09 Ohm 41 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R / MOSFET N-CH 150V 3.6A 8-SOIC

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ment14 APAC: MOSFET, N-CH, 150V, 3.6A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Source Voltage Vds:150V; On Resistance

***nsix Microsemi: Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:3.6A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:30V; Package/Case:8-SO; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***nell: MOSFET, N-CH, 150V, 3.6A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

SI4455DY-T1-GE3 More Information

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI4455DY-T1-GE3 DISTI # V72:2272_09216500	Vishay Intertechnologies	Trans MOSFET P-CH 150V 2A 8-Pin SOIC N T/R RoHS: Compliant	157	100:$1.0176 25:$1.1418 10:$1.2686 1:$1.4601
SI4455DY-T1-GE3 DISTI # V36:1790_09216500	Vishay Intertechnologies	Trans MOSFET P-CH 150V 2A 8-Pin SOIC N T/R RoHS: Compliant	0	2500000:$0.6477 1250000:$0.6478 250000:$0.6543 25000:$0.6635 2500:$0.6650
SI4455DY-T1-GE3 DISTI # SI4455DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 150V 2A 8-SO Min Qty: 1 Container: Cut Tape (CT)	5814In Stock	1000:$0.7339 500:$0.9296 100:$1.1253 10:$1.4430 1:$1.6100
SI4455DY-T1-GE3 DISTI # SI4455DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 150V 2A 8-SO Min Qty: 1 Container: Digi-Reel®	5814In Stock	1000:$0.7339 500:$0.9296 100:$1.1253 10:$1.4430 1:$1.6100
SI4455DY-T1-GE3 DISTI # SI4455DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 150V 2A 8-SO Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	5000:$0.6318 2500:$0.6650
SI4455DY-T1-GE3 DISTI # 30150545	Vishay Intertechnologies	Trans MOSFET P-CH 150V 2A 8-Pin SOIC N T/R RoHS: Compliant	157	100:$1.0176 25:$1.1418 10:$1.2686
SI4455DY-T1-GE3 DISTI # SI4455DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 150V 2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4455DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.6459 15000:$0.6629 10000:$0.6808 5000:$0.6997 2500:$0.7197
SI4455DY-T1-GE3 DISTI # SI4455DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 150V 2A 8-Pin SOIC N T/R (Alt: SI4455DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4455DY-T1-GE3 DISTI # 781-SI4455DY-GE3	Vishay Intertechnologies	MOSFET -150V Vds 20V Vgs SO-8 RoHS: Compliant	2826	1:$1.6100 10:$1.3700 100:$1.0700 500:$0.9140 1000:$0.7210 2500:$0.6640 5000:$0.6310 10000:$0.6170
SI4455DY-T1-GE3	Vishay Intertechnologies	MOSFET -150V Vds 20V Vgs SO-8 RoHS: Compliant	Americas -
SI4455DY-T1-GE3	Vishay Intertechnologies		1197

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Availability

Stock:: Available
On Order:: 1986
Enter Quantity:

Current price of SI4455DY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.66~~; ~~$1.66~~

10: ~~$1.36~~; ~~$13.60~~

100: ~~$1.04~~; ~~$104.00~~

500: ~~$0.90~~; ~~$451.00~~

1000: ~~$0.71~~; ~~$712.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SI4455DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes