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SIZF914DT-T1-GE3

SIZF914DT-T1-GE3
Mfr. #:
SIZF914DT-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 25V Vds 20V Vgs PowerPAIR 6 x 5F
Lifecycle:
New from this manufacturer.
Datasheet:
SIZF914DT-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
SIZF914DT-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAIR-6x5F-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel, NPN
Vds - Drain-Source Breakdown Voltage:
25 V
Id - Continuous Drain Current:
40 A, 60 A
Rds On - Drain-Source Resistance:
6.2 mOhms, 1.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.1 V
Vgs - Gate-Source Voltage:
4.5 V
Qg - Gate Charge:
14 nC, 65 nC
Minimum Operating Temperature:
- 50 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
26.6 W, 60 W
Configuration:
Dual
Channel Mode:
Enhancement
Tradename:
TrenchFET, SkyFET, PowerPAIR
Packaging:
Reel
Series:
SIZ
Transistor Type:
2 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
45 S, 105 S
Fall Time:
10 ns, 15 ns
Product Type:
MOSFET
Rise Time:
50 ns, 60 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
15 ns, 45 ns
Typical Turn-On Delay Time:
20 ns, 32 ns
Tags
SIZF91, SIZF9, SIZF, SiZ
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Image Part # Description
SIZF914DT-T1-GE3

Mfr.#: SIZF914DT-T1-GE3

OMO.#: OMO-SIZF914DT-T1-GE3

 MOSFET 25V Vds 20V Vgs PowerPAIR 6 x 5F
Availability
Stock:
Available
On Order:
1000
Enter Quantity:
Current price of SIZF914DT-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.61
$1.61
10
$1.34
$13.40
100
$1.04
$104.00
500
$0.91
$455.00
1000
$0.75
$754.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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