SIA417DJ-T1-GE3

Mfr. #:: SIA417DJ-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET RECOMMENDED ALT 78-SIA427ADJ-T1-GE3
Lifecycle:: New from this manufacturer.
Datasheet:: SIA417DJ-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIA417DJ-T1-GE3 Datasheet SIA417DJ-T1-GE3 Datasheet (P4-P6)SIA417DJ-T1-GE3 Datasheet (P7)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-SC70-6

Tradename:: TrenchFET

Packaging:: Reel

Height:: 0.75 mm

Length:: 2.05 mm

Series:: SIA

Width:: 2.05 mm

Brand:: Vishay / Siliconix

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Part # Aliases:: SIA417DJ-GE3

Unit Weight:: 0.070548 oz

Tags: SIA417, SIA41, SIA4, SIA

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA417DJ-T1-GE3 Description

***et: Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R

***nell: P CHANNEL MOSFET, -8V, 12A, SC-70

***i-Key: MOSFET P-CH 8V 12A SC70-6

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-12000mA; Drain Source Voltage, Vds:-8V; On Resistance, Rds(on):0.095ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:3.5W ;RoHS Compliant: Yes

***ment14 APAC: P CHANNEL MOSFET, -8V, 12A, SC-70; Trans; P CHANNEL MOSFET, -8V, 12A, SC-70; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:-1V; No. of Pins:6

Market price

Part #	Mfg.	Description	Stock	Price
SIA417DJ-T1-GE3 DISTI # SIA417DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 8V 12A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SIA417DJ-T1-GE3 DISTI # SIA417DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 8V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SIA417DJ-T1-GE3 DISTI # SIA417DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 8V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SIA417DJ-T1-GE3 DISTI # 781-SIA417DJ-T1-GE3	Vishay Intertechnologies	MOSFET 8.0V 12A 19W 23mohm @ 4.5V RoHS: Compliant	0
SIA417DJ-T1-GE3	Vishay Siliconix	POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 8V, 0.023OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	2895	2561:$0.2750 572:$0.3125 1:$1.0000

Related products

Image	Part #	Description
	Mfr.#: SIA417DJ-T1-GE3 OMO.#: OMO-SIA417DJ-T1-GE3	MOSFET RECOMMENDED ALT 78-SIA427ADJ-T1-GE3
	Mfr.#: SIA417DJ-T1-GE3 OMO.#: OMO-SIA417DJ-T1-GE3-VISHAY	IGBT Transistors MOSFET 8.0V 12A 19W 23mohm @ 4.5V
	Mfr.#: SIA417DJ-T1 OMO.#: OMO-SIA417DJ-T1-1190	New and Original
	Mfr.#: SIA417DJ-T1-E3 OMO.#: OMO-SIA417DJ-T1-E3-1190	MOSFET RECOMMENDED ALT 78-SIA427ADJ-T1-GE3

Availability

Stock:: Available
On Order:: 3500
Enter Quantity:

Current price of SIA417DJ-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

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SIA417DJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes