OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

FDMC86012

FDMC86012
Mfr. #:
FDMC86012
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 30V N-Channel PowerTrench MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
FDMC86012 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FDMC86012 more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
Power-33-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
88 A
Rds On - Drain-Source Resistance:
2.7 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
12 V
Qg - Gate Charge:
27 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
54 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
PowerTrench Power Clip
Packaging:
Reel
Height:
0.8 mm
Length:
3.3 mm
Series:
FDMC86012
Transistor Type:
1 N-Channel
Width:
3.3 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
144 S
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
43 ns
Typical Turn-On Delay Time:
11 ns
Unit Weight:
0.005386 oz
Tags
FDMC86, FDMC8, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power Trench® MOSFET 30V, 88A, 2.7mΩ
***r Electronics
Power Field-Effect Transistor, 23A I(D), 30V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***rchild Semiconductor
This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide a sub logic-level device.
***emi
N-Channel PowerTrench® MOSFET 30V, 131A, 2.5mΩ
***r Electronics
Power Field-Effect Transistor, 26A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.
***ure Electronics
N-Channel 30 V 42 A 2.4 mOhm Surface Mount PowerTrench® SyncFETTM - Power56
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***et
TRANS MOSFET N-CH 30V 28A 8PIN PWR 56
***emi
30V N-Channel PowerTrench® SyncFET™
***S
French Electronic Distributor since 1988
***rchild Semiconductor
The FDMS8660AS has been designed to minimize losses inpower conversion application. Advancements in both silicon andpackage technologies have been combined to offer the lowestrDS(on) while maintaining excellent switching performance. Thisdevice has the added benefit of an efficient monolithic Schottkybody diode.
***ure Electronics
Single N-Channel 30 V 2.5 mOhm 124 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:96W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ark
Mosfet Transistor, N Channel, 24 A, 30 V, 0.0023 Ohm, 10 V, 1.8 V Rohs Compliant: Yes
***(Formerly Allied Electronics)
IRF8788PBF N-channel MOSFET Transistor,24 A, 30 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 2.8 mOhm 66 nC HEXFET® Power Mosfet - SOIC-8
***p One Stop
Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R
***nell
MOSFET, N-CH, 30V, SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissi
***ure Electronics
Single N-Channel 30 V 2.9 mOhm 45 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:96W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
FDMC8xxxx N-Ch Shielded Gate PowerTrench® MOSFETs
ON Semiconductor FDMC8xxxx N-Channel Shielded Gate PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. FDMC8xxxx MOSFETs are designed for use in DC-DC conversion applications.Learn More
Part # Mfg. Description Stock Price
FDMC86012
DISTI # V36:1790_06337905		ON SemiconductorRP5 30V/12V NCH POWER TRENCH M0
    FDMC86012
    DISTI # V72:2272_06337905    		ON SemiconductorRP5 30V/12V NCH POWER TRENCH M0
      FDMC86012
      DISTI # FDMC86012CT-ND      		ON SemiconductorMOSFET N-CH 30V 23A 8MLP
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		5090In Stock
      • 1000:$1.3143
      • 500:$1.5862
      • 100:$2.0394
      • 10:$2.5380
      • 1:$2.8100
      FDMC86012
      DISTI # FDMC86012DKR-ND      		ON SemiconductorMOSFET N-CH 30V 23A 8MLP
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		5090In Stock
      • 1000:$1.3143
      • 500:$1.5862
      • 100:$2.0394
      • 10:$2.5380
      • 1:$2.8100
      FDMC86012
      DISTI # FDMC86012TR-ND      		ON SemiconductorMOSFET N-CH 30V 23A 8MLP
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		3000In Stock
      • 6000:$1.1440
      • 3000:$1.1880
      FDMC86012
      DISTI # FDMC86012      		ON SemiconductorTrans MOSFET N-CH 30V 23A 8-Pin Power 33 T/R (Alt: FDMC86012)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Europe - 0
      • 30000:€0.9459
      • 18000:€1.0129
      • 12000:€1.0909
      • 6000:€1.1819
      • 3000:€1.4189
      FDMC86012
      DISTI # FDMC86012      		ON SemiconductorTrans MOSFET N-CH 30V 23A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC86012)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.9869
      • 18000:$1.0119
      • 12000:$1.0249
      • 6000:$1.0379
      • 3000:$1.0449
      FDMC86012
      DISTI # 63W2855      		ON SemiconductorFET 30V 2.7 MOHM PQFN33 / REEL0
      • 9000:$1.0400
      • 1:$1.0800
      FDMC86012
      DISTI # 512-FDMC86012      		ON SemiconductorMOSFET 30V N-Channel PowerTrench MOSFET
      RoHS: Compliant      		5214
      • 1:$2.3500
      • 10:$2.0000
      • 100:$1.6000
      • 500:$1.4000
      • 1000:$1.1600
      • 3000:$1.0800
      • 6000:$1.0400
      Image Part # Description
      ADA4530-1ARZ

      Mfr.#: ADA4530-1ARZ

      OMO.#: OMO-ADA4530-1ARZ

      		 Instrumentation Amplifiers Ultra low input bias current 16V prec
      AD9162BBCZ

      Mfr.#: AD9162BBCZ

      OMO.#: OMO-AD9162BBCZ

      		 Digital to Analog Converters - DAC General Purpose 5 GHz RFDAC
      MT41K64M16TW-107 AAT:J

      Mfr.#: MT41K64M16TW-107 AAT:J

      OMO.#: OMO-MT41K64M16TW-107-AAT-J

      		 DRAM DDR3 1G 64MX16 FBGA
      DMG3415UFY4Q-7

      Mfr.#: DMG3415UFY4Q-7

      OMO.#: OMO-DMG3415UFY4Q-7-DIODES

      		 Trans MOSFET P-CH 16V 2.5A T/R
      ADA4530-1ARZ

      Mfr.#: ADA4530-1ARZ

      OMO.#: OMO-ADA4530-1ARZ-ANALOG-DEVICES-INC-ADI

      		 Instrumentation Amplifiers Ultra low input bias current 16V prec
      AD9162BBCZ

      Mfr.#: AD9162BBCZ

      OMO.#: OMO-AD9162BBCZ-ANALOG-DEVICES-INC-ADI

      		 IC DAC 16BIT 1CH CSBGA-165
      GRM155R61A475MEAAD

      Mfr.#: GRM155R61A475MEAAD

      OMO.#: OMO-GRM155R61A475MEAAD-MURATA-ELECTRONICS

      		 Cap Ceramic 4.7uF 10V X5R 20% Pad SMD 0402 85C T/R
      CRCW06031K00FKEAC

      Mfr.#: CRCW06031K00FKEAC

      OMO.#: OMO-CRCW06031K00FKEAC-VISHAY-DALE

      		 D11/CRCW0603-C 100 1K0 1% ET1
      CRCW06033K01FKEAC

      Mfr.#: CRCW06033K01FKEAC

      OMO.#: OMO-CRCW06033K01FKEAC-VISHAY-DALE

      		 D11/CRCW0603-C 100 3K01 1% ET1
      74479276210

      Mfr.#: 74479276210

      OMO.#: OMO-74479276210-WURTH-ELECTRONICS

      		 INDUCTOR, 1UH, 2A, 20%, SHIELDED
      Availability
      Stock:
      Available
      On Order:
      1987
      Enter Quantity:
      Current price of FDMC86012 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.35
      $2.35
      10
      $2.00
      $20.00
      100
      $1.60
      $160.00
      500
      $1.40
      $700.00
      1000
      $1.16
      $1 160.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
      Start with
      Newest Products
      More Newest Products
      Top