FJP3307DH2TU

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

400 V

Collector- Base Voltage VCBO:

700 V

Emitter- Base Voltage VEBO:

9 V

Maximum DC Collector Current:

8 A

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Height:

9.65 mm (Max)

Length:

10.67 mm (Max)

Packaging:

Tube

Width:

4.83 mm (Max)

Brand:

ON Semiconductor / Fairchild

DC Collector/Base Gain hfe Min:

26

Pd - Power Dissipation:

80000 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1000

Subcategory:

Transistors

Part # Aliases:

FJP3307DH2TU_NL

Unit Weight:

0.080072 oz

Tags

FJP3307, FJP33, FJP3, FJP