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STGWA50M65DF2

STGWA50M65DF2
Mfr. #:
STGWA50M65DF2
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors PTD HIGH VOLTAGE
Lifecycle:
New from this manufacturer.
Datasheet:
STGWA50M65DF2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STGWA50M65DF2 more Information STGWA50M65DF2 Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.65 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
80 A
Pd - Power Dissipation:
375 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
STGWA50M65DF2
Continuous Collector Current Ic Max:
80 A
Brand:
STMicroelectronics
Gate-Emitter Leakage Current:
+/- 250 uA
Product Type:
IGBT Transistors
Factory Pack Quantity:
600
Subcategory:
IGBTs
Unit Weight:
0.211644 oz
Tags
STGWA, STGW, STG
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 50 A low loss
***ical
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
***et
Trans IGBT Chip N 650V 80A 3-Pin TO-247 Tube
***i-Key
TRENCH GATE FIELD-STOP IGBT M SE
***ark
Ptd High Voltage
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
Part # Mfg. Description Stock Price
STGWA50M65DF2
DISTI # V36:1790_16642443		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube0
    STGWA50M65DF2
    DISTI # 497-16973-ND    		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT M SE
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		90In Stock
    • 3000:$2.0720
    • 600:$2.5796
    • 100:$3.0303
    • 25:$3.4964
    • 10:$3.6990
    • 1:$4.1200
    STGWA50M65DF2
    DISTI # STGWA50M65DF2    		STMicroelectronicsTrans IGBT Chip N 650V 80A 3-Pin TO-247 Tube - Bulk (Alt: STGWA50M65DF2)
    RoHS: Compliant
    Min Qty: 600
    Container: Bulk    		Americas - 0
    • 6000:$1.7900
    • 3000:$1.8900
    • 1800:$1.9900
    • 1200:$2.0900
    • 600:$2.1900
    STGWA50M65DF2
    DISTI # 20AC4220    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 1:$1.8500
    STGWA50M65DF2
    DISTI # 511-STGWA50M65DF2    		STMicroelectronicsIGBT Transistors PTD HIGH VOLTAGE
    RoHS: Compliant    		0
    • 1:$3.9100
    • 10:$3.3300
    • 100:$2.8800
    • 250:$2.7300
    • 500:$2.4500
    • 1000:$2.0700
    • 2500:$1.9600
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    OMO.#: OMO-LCMXO2-2000HC-5TG100C-LATTICE-SEMICONDUCTOR

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    Availability
    Stock:
    Available
    On Order:
    1984
    Enter Quantity:
    Current price of STGWA50M65DF2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $3.91
    $3.91
    10
    $3.33
    $33.30
    100
    $2.88
    $288.00
    250
    $2.73
    $682.50
    500
    $2.45
    $1 225.00
    1000
    $2.07
    $2 070.00
    2500
    $1.96
    $4 900.00
    5000
    $1.89
    $9 450.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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