FDMS3500

Mfr. #:: FDMS3500
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET 75V N-Channel PowerTrench
Lifecycle:: New from this manufacturer.
Datasheet:: FDMS3500 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: FDMS3500 more Information

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: Power-56-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 75 V

Id - Continuous Drain Current:: 9.2 A

Rds On - Drain-Source Resistance:: 14.5 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2.5 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: PowerTrench

Packaging:: Reel

Height:: 1.1 mm

Length:: 6 mm

Series:: FDMS3500

Transistor Type:: 1 N-Channel

Width:: 5 mm

Brand:: ON Semiconductor / Fairchild

Fall Time:: 6 ns

Product Type:: MOSFET

Rise Time:: 9 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 48 ns

Typical Turn-On Delay Time:: 16 ns

Unit Weight:: 0.002402 oz

Tags: FDMS35, FDMS3, FDMS, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMS3500 Description

***emi: N-Channel PowerTrench® MOSFET 75V, 49A, 14.5mΩ

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***nell: MOSFET,N CH,75V,9.2A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (19-Dec-2011)

***ure Electronics: Single N-Channel 80 V 13.4 mOhm 27 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 80V 10A 8-Pin SOIC T/R / MOSFET N-CH 80V 10A 8-SOIC

***ineon SCT: 80V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS

***nell: MOSFET, N-CH, 80V, 10A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***(Formerly Allied Electronics): Transistor, MOSFET, N-channel normal level, 80V, 11A, 12.3 mOhm, TDSON8 | Infineon BSC123N08NS3 G

***ure Electronics: Single N-Channel 80 V 24 mOhm 25 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 55A, 80V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:80V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:55A; Power Dissipation Pd:66W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 55 / Drain-Source Voltage (Vds) V = 80 / ON Resistance (Rds(on)) mOhm = 12.3 / Gate-Source Voltage V = 20 / Fall Time ns = 4 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SuperSO8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 66

***ineon: OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control

***emi: N-Channel PowerTrench® MOSFET, 60V, 10A, 14mΩ

***ure Electronics: N-Channel 60 V 14 mOhm SMT PowerTrench Mosfet SOIC-8

***Yang: Trans MOSFET N-CH 60V 10A 8-Pin SOIC N T/R - Tape and Reel

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

***emi: N-Channel UltraFET Trench® MOSFET 60V, 22A, 11.5mΩ

***rchild Semiconductor: UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

***ment14 APAC: MOSFET, N, SMD, MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):11.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:10.6A; Package / Case:Power 56; Power Dissipation Pd:2.5W; Pulse Current Idm:60A; SMD Marking:FDMS5672; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:3.2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***(Formerly Allied Electronics): MOSFET, N Ch., 80V, 10A, 13.4 MOHM, 27 NC QG, SO-8, Pb-Free

***ernational Rectifier: 80V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package

***p One Stop Global: Trans MOSFET N-CH 80V 10A 8-Pin SOIC Tube

***ment14 APAC: MOSFET, N, 80V, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:80V; On Resistance Rds(on):13.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:79mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Base Number:7854; Current Id Max:10A; Output Current Max:2.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:79mW; Pulse Current Idm:79A; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 80 V 15 mOhm 35 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: MOSFET N-CH 80V 9.3A 8-SOIC / Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC T/R

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 1500pF 630volts U2J +/-5%

*** Stop Electro: Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side

***nell: MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.3A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd

FDMS3500 More Information

Fairchild PowerTrench MOSFETs

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

Part #	Mfg.	Description	Stock	Price
FDMS3500 DISTI # FDMS3500CT-ND	ON Semiconductor	MOSFET N-CH 75V 9.2A POWER56 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5995In Stock	1000:$0.9432 500:$1.1302 100:$1.4418 10:$1.7850 1:$1.9700
FDMS3500 DISTI # FDMS3500DKR-ND	ON Semiconductor	MOSFET N-CH 75V 9.2A POWER56 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5995In Stock	1000:$0.9432 500:$1.1302 100:$1.4418 10:$1.7850 1:$1.9700
FDMS3500 DISTI # FDMS3500TR-ND	ON Semiconductor	MOSFET N-CH 75V 9.2A POWER56 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.8552
FDMS3500 DISTI # FDMS3500	ON Semiconductor	Trans MOSFET N-CH 75V 9.2A 8-Pin Power 56 T/R (Alt: FDMS3500) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€1.0619 6000:€0.8689 12000:€0.7969 18000:€0.7349 30000:€0.6829
FDMS3500 DISTI # FDMS3500	ON Semiconductor	Trans MOSFET N-CH 75V 9.2A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS3500) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.7179 6000:$0.7139 12000:$0.7049 18000:$0.6959 30000:$0.6789
FDMS3500 DISTI # 512-FDMS3500	ON Semiconductor	MOSFET 75V N-Channel PowerTrench RoHS: Compliant	4065	1:$1.6200 10:$1.3800 100:$1.1000 500:$0.9630 1000:$0.7980
FDMS3500	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 9.2A I(D), 75V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	10516	1000:$0.8000 500:$0.8500 100:$0.8800 25:$0.9200 1:$0.9900
FDMS3500	Fairchild Semiconductor Corporation		3519

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FDMS3500

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes