T1G2028536-FL

T1G2028536-FL
Mfr. #:
T1G2028536-FL
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
Lifecycle:
New from this manufacturer.
Datasheet:
T1G2028536-FL Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
T1G2028536-FL more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
20.8 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
36 V
Vgs - Gate-Source Breakdown Voltage:
145 V
Id - Continuous Drain Current:
24 A
Output Power:
260 W
Maximum Drain Gate Voltage:
48 V
Maximum Operating Temperature:
+ 275 C
Pd - Power Dissipation:
288 W
Mounting Style:
SMD/SMT
Packaging:
Tray
Configuration:
Single
Operating Frequency:
2 GHz
Product:
RF Power Transistor
Series:
T1G
Type:
GaN SiC HEMT
Brand:
Qorvo
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
25
Subcategory:
Transistors
Part # Aliases:
1111394
Tags
T1G2028536, T1G2, T1G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
T1G2028536-FL
DISTI # 772-T1G2028536-FL
QorvoRF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
RoHS: Compliant
12
  • 1:$508.0000
T1G2028536-FL/FS 1.2-1.4GHz EVB5
DISTI # 772-T1G2028536-EVAL
QorvoRF Development Tools DC-2GHz P3dB 260W Eval Board
RoHS: Compliant
0
  • 1:$875.0000
1111394
DISTI # T1G2028536-FL
QorvoRF POWER TRANSISTOR
RoHS: Compliant
31
  • 1:$378.7500
Image Part # Description
T1G2028536-FS

Mfr.#: T1G2028536-FS

OMO.#: OMO-T1G2028536-FS

RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
T1G2028536-FL

Mfr.#: T1G2028536-FL

OMO.#: OMO-T1G2028536-FL

RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
T1G2028536-FL

Mfr.#: T1G2028536-FL

OMO.#: OMO-T1G2028536-FL-318

RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
T1G2028536-FS

Mfr.#: T1G2028536-FS

OMO.#: OMO-T1G2028536-FS-318

RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
T1G2028536-FL/FS 1.2-1.4GHz EVB5

Mfr.#: T1G2028536-FL/FS 1.2-1.4GHz EVB5

OMO.#: OMO-T1G2028536-FL-FS-1-2-1-4GHZ-EVB5-1152

RF Development Tools DC-2GHz P3dB 260W Eval Board
T1G2028535-FL

Mfr.#: T1G2028535-FL

OMO.#: OMO-T1G2028535-FL-1190

New and Original
Availability
Stock:
12
On Order:
1995
Enter Quantity:
Current price of T1G2028536-FL is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$508.00
$508.00
25
$468.17
$11 704.25
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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