T1G2028536-FS

T1G2028536-FS
Mfr. #:
T1G2028536-FS
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
Lifecycle:
New from this manufacturer.
Datasheet:
T1G2028536-FS Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
T1G2028536-FS more Information
Product Attribute
Attribute Value
Manufacturer
TriQuint (Qorvo)
Product Category
Transistors - FETs, MOSFETs - Single
Series
T1G
Packaging
Tray
Part-Aliases
1110346
Mounting-Style
SMD/SMT
Technology
GaN SiC
Configuration
Single
Transistor-Type
HEMT
Gain
18 dB
Output-Power
260 W
Pd-Power-Dissipation
288 W
Maximum-Operating-Temperature
+ 250 C
Operating-Frequency
2 GHz
Id-Continuous-Drain-Current
24 A
Vds-Drain-Source-Breakdown-Voltage
36 V
Transistor-Polarity
N-Channel
Vgs-Gate-Source-Breakdown-Voltage
145 V
Maximum-Drain-Gate-Voltage
48 V
Tags
T1G2028536, T1G2, T1G
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
T1G2028536-FS
DISTI # 772-T1G2028536-FS
QorvoRF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
RoHS: Compliant
25
  • 1:$508.0000
Image Part # Description
T1G2028536-FS

Mfr.#: T1G2028536-FS

OMO.#: OMO-T1G2028536-FS

RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
T1G2028536-FL

Mfr.#: T1G2028536-FL

OMO.#: OMO-T1G2028536-FL

RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
T1G2028536-FL

Mfr.#: T1G2028536-FL

OMO.#: OMO-T1G2028536-FL-318

RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
T1G2028536-FS

Mfr.#: T1G2028536-FS

OMO.#: OMO-T1G2028536-FS-318

RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
T1G2028536-FL/FS 1.2-1.4GHz EVB5

Mfr.#: T1G2028536-FL/FS 1.2-1.4GHz EVB5

OMO.#: OMO-T1G2028536-FL-FS-1-2-1-4GHZ-EVB5-1152

RF Development Tools DC-2GHz P3dB 260W Eval Board
T1G2028535-FL

Mfr.#: T1G2028535-FL

OMO.#: OMO-T1G2028535-FL-1190

New and Original
Availability
Stock:
Available
On Order:
3500
Enter Quantity:
Current price of T1G2028536-FS is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$762.00
$762.00
10
$723.90
$7 239.00
100
$685.80
$68 580.00
500
$647.70
$323 850.00
1000
$609.60
$609 600.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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