FDMS037N08B

Mfr. #:: FDMS037N08B
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET PT7 75V 3.7mohm PQFN56
Lifecycle:: New from this manufacturer.
Datasheet:: FDMS037N08B Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: Power-56-8

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 75 V

Id - Continuous Drain Current:: 100 A

Rds On - Drain-Source Resistance:: 3.7 mOhms

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Tradename:: PowerTrench

Packaging:: Reel

Height:: 1.1 mm

Length:: 6 mm

Series:: FDMS037N08B

Width:: 5 mm

Brand:: ON Semiconductor / Fairchild

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Unit Weight:: 0.002402 oz

Tags: FDMS03, FDMS0, FDMS, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMS037N08B Description

***ure Electronics: Single N-Channel 75 V 3.7 mOhm 100 nC 104.2 W PowerTrench SMT Mosfet POWER 56-8

***emi: N-Channel PowerTrench® MOSFET 75V, 100A, 3.7mΩ

***r Electronics: Small Signal Field-Effect Transistor, 19.9A I(D), 75V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N-CH, 75V, 100A, 104.2W, POWER56; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.00301ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 104.2W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package, MG-WDSON-8, RoHS

***ure Electronics: Single N-Channel 60 V 2.9 mOhm 120 nC HEXFET® Power Mosfet - DirectFET®

***ment14 APAC: MOSFET, N-CH, 60V, 114A, DIRECTFET ME; Transistor Polarity:N Channel; Continuous Drain Current Id:114A; Source Voltage Vds:60V; On Resistance

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

***nell: MOSFET, N-CH, 60V, 114A, DIRECTFET ME; Transistor Polarity: N Channel; Continuous Drain Current Id: 114A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: 96W; Transistor Case Style: DirectFET ME; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: StrongIRFET, DirectFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: Single N-Channel 75 V 4.1 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH Si 75V 170A 3-Pin(2+Tab) D2PAK Tube

***(Formerly Allied Electronics): MOSFET, N Ch., 75V, 170A, 4.1 MOHM, 120NC QG, D2-PAK, Pb-Free

***nell: MOSFET, N, 75V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissip

***(Formerly Allied Electronics): Transistor MOSFET N-ch 75V 120A D2PAK

***ical: Trans MOSFET N-CH Si 75V 170A Automotive 3-Pin(2+Tab) D2PAK T/R

***ernational Rectifier: Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon SCT: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS

***nell: MOSFET, N-CH, 75V, 170A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified

***icroelectronics: N-channel 80 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

***ical: Trans MOSFET N-CH 80V 120A 8-Pin Power Flat T/R

***(Formerly Allied Electronics): MOSFET N-Ch 80V 26A STripFET PowerFLAT8

***et Japan: Trans MOSFET N-CH 80V 123A PowerFlat T/R

*** Electronic Components: MOSFET N-CH 80V 4 mOhm 24A STripFET VII

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 130A I(D), 80V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***icroelectronics SCT: Power MOSFETs, 80V, 120A, PowerFLAT 5x6, Tape and Reel

***ment14 APAC: MOSFET, N-CH, 80V, 120A, 175DEG C, 135W;

***ronik: N-CH 80V 130A 3,6mOhm PFLAT5x6

***ark: MOSFET, N CH, 80V, 0.0026OHM, 76A, POWER 56-8; Transistor Polarity:N Channel; Co

***emi: N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 80V, 110A, 3.1mΩ

***ure Electronics: Dual N-Channel 80 V 5 mOhm 84 nC 125 W PowerTrench SMT Mosfet - PQFN-8

*** Stop Electro: Power Field-Effect Transistor, 24A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

***nell: MOSFET, N CH, 80V, 76A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)

*** Electronics: In a Pack of 5, N-Channel MOSFET, 100 A, 60 V, 8-Pin Power 56 ON Semiconductor FDMS030N06B

***ure Electronics: Single N-Channel 60 V 3 mOhm 75 nC 2.5 W PowerTrench SMT Mosfet - POWER 56-8

***emi: N-Channel PowerTrench® MOSFET 60V, 100A, 3mΩ

***ment14 APAC: MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:60V; On Resistance

***r Electronics: Power Field-Effect Transistor, 22.1A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.3V; Power Dissipation Pd: 104W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Market price

Part #	Mfg.	Description	Stock	Price
FDMS037N08B DISTI # V72:2272_06338157	ON Semiconductor	Trans MOSFET N-CH Si 75V 19.9A 8-Pin Power 56 T/R	4238	3000:$0.9424 1000:$1.0156 500:$1.2344 250:$1.2683 100:$1.4092 25:$1.7563 10:$1.7751 1:$2.0810
FDMS037N08B DISTI # FDMS037N08BTR-ND	ON Semiconductor	MOSFET N-CH 75V 100A 8QFN RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$1.1587
FDMS037N08B DISTI # FDMS037N08BCT-ND	ON Semiconductor	MOSFET N-CH 75V 100A 8QFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.2785 500:$1.5334 100:$1.9583 10:$2.4250 1:$2.6800
FDMS037N08B DISTI # FDMS037N08BDKR-ND	ON Semiconductor	MOSFET N-CH 75V 100A 8QFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.2785 500:$1.5334 100:$1.9583 10:$2.4250 1:$2.6800
FDMS037N08B DISTI # 30331036	ON Semiconductor	Trans MOSFET N-CH Si 75V 19.9A 8-Pin Power 56 T/R	4238	3000:$0.9424 1000:$1.0156 500:$1.2344 250:$1.2683 100:$1.4092 25:$1.7563 10:$1.7751 7:$2.0810
FDMS037N08B DISTI # FDMS037N08B	ON Semiconductor	Trans MOSFET N-CH 75V 19.9A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS037N08B) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.9799 6000:$0.9739 12000:$0.9609 18000:$0.9489 30000:$0.9249
FDMS037N08B DISTI # FDMS037N08B	ON Semiconductor	Trans MOSFET N-CH 75V 19.9A 8-Pin Power 56 T/R (Alt: FDMS037N08B) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€1.3039 6000:€1.0869 12000:€1.0029 18000:€0.9309 30000:€0.8689
FDMS037N08B DISTI # 512-FDMS037N08B	ON Semiconductor	MOSFET PT7 75V 3.7mohm PQFN56 RoHS: Compliant	726	1:$2.2100 10:$1.8800 100:$1.5000 500:$1.3200 1000:$1.0900 3000:$1.0200

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FDMS037N08B

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes