NGTB15N135IHRWG

Mfr. #:: NGTB15N135IHRWG
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors 1350V/15A RC IGBT FSII TO
Lifecycle:: New from this manufacturer.
Datasheet:: NGTB15N135IHRWG Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: NGTB15N135IHRWG Datasheet NGTB15N135IHRWG Datasheet (P4-P6)NGTB15N135IHRWG Datasheet (P7-P9)NGTB15N135IHRWG Datasheet (P10)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Series:: NGTB15N135IHR

Packaging:: Tube

Brand:: ON Semiconductor

Product Type:: IGBT Transistors

Factory Pack Quantity:: 30

Subcategory:: IGBTs

Tags: NGTB15N1, NGTB15, NGTB1, NGTB, NGT

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NGTB15N135IHRWG Description

***ical: Trans IGBT Chip N-CH 1350V 30A 357000mW 3-Pin(3+Tab) TO-247 Tube

***emi: IGBT 1350V 15A FS2-RC Induction Heating

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 1350V V(BR)CES, N-Channel

***nell: IGBT, 1.35KV, 30A, 175DEG C, 357W;

***i-Key: IGBT TRENCH/FS 1350V 30A TO247

***ark: Igbt, Single, 1.35Kv, 30A, To-247; Continuous Collector Current:30A; Collector Emitter Saturation Voltage:2.15V; Power Dissipation:357W; Collector Emitter Voltage Max:1.35Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C; Msl:- Rohs Compliant: Yes |Onsemi NGTB15N135IHRWG

***ical: Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-247 Rail

***inecomponents.com: 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

***ure Electronics: HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247

***ment14 APAC: IGBT,N CH,NPT,1200V,35A,TO-247; Transistor Type:IGBT; DC Collector Current:35A; Collector Emitter Voltage Vces:2.7V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Power Dissipation Max:298W

***rchild Semiconductor: HGTG10N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

***ical: Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-247 Rail

***inecomponents.com: 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

***nell: IGBT, 1200V, 21A; DC Collector Current: 21A; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operati

***rchild Semiconductor: HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.

***ineon SCT: 1350 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***ark: Igbt, Single, 1.35Kv, 40A, To-247; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:288W; Collector Emitter Voltage V(Br)Ceo:1.35Kv; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW20N135R5XKSA1

***ineon: The latest generation of reverse conducting IGBTs has been optimized for the demanding requirements of Induction Cooking applications. The new 20A RC-H5 devices complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability. | Summary of Features: Switching losses reduced by 30%; Very low conduction losses; Reduced turn-on current spike up to 10%; T j(max) = 175C; Soft current turn-off waveforms for low EMI; Higher blocking voltage V BR(min) = 1350 | Benefits: Increased switching frequency; Lowest power dissipation; Better thermal management for higher reliability; Lower EMI filtering requirements; Reduced system costs; Highest reliability against peak current | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Induction rice cookers; Induction water heaters; Other resonant switching topologies

***et: Reverse Conducting IGBT With Monolithic Body Diode 1350V 30A 3-Pin TO-247

***nell: IGBT, SINGLE, 1.35KV, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 349W; Collector Emitter Voltage V(br)ceo: 1.35k; Available until stocks are exhausted

***ineon: The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications

***ical: Trans IGBT Chip N-CH 1350V 120A 394000mW 3-Pin(3+Tab) TO-247 Tube

***emi: IGBT, 1350V 40A FS2-RC Induction Heating

***r Electronics: Insulated Gate Bipolar Transistor, 80A I(C), 1350V V(BR)CES, N-Channel

***ark: Transistor, Igbt, 2.4V, 80A, To-247-3; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):2.4V; Power Dissipation Pd:394W; Collector Emitter Voltage V(Br)Ceo:1.35Kv; Transistor Case Style:To-247; No. Of Rohs Compliant: Yes |Onsemi NGTB40N135IHRWG

***i-Key: IGBT TRENCH/FS 1350V 80A TO247

***ical: Trans IGBT Chip N-CH 1350V 80A 429000mW 3-Pin(3+Tab) TO-247 Tube

***ark: Transistor, Igbt, 1.35Kv, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:429W; Collector Emitter Voltage V(Br)Ceo:1.35Kv; Transistor Case Style:to-247; No. Of Rohs Compliant: Yes

***ineon: The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications

Market price

Part #	Mfg.	Description	Stock	Price
NGTB15N135IHRWG DISTI # NGTB15N135IHRWG-ND	ON Semiconductor	IGBT 1350V 15A TO247-3 RoHS: Compliant Min Qty: 120 Container: Tube	Temporarily Out of Stock	120:$2.9893
NGTB15N135IHRWG DISTI # NGTB15N135IHRWG	ON Semiconductor	Trans IGBT Chip N-CH 1350V 30A 3-Pin TO-247 Rail (Alt: NGTB15N135IHRWG) RoHS: Compliant Min Qty: 1	Europe - 0	1:€2.5900 10:€2.0900 25:€1.9900 50:€1.8900 100:€1.8900 500:€1.7900 1000:€1.7900
NGTB15N135IHRWG	ON Semiconductor	RoHS: Not Compliant	4530	1000:$2.3800 500:$2.5100 100:$2.6100 25:$2.7200 1:$2.9300
NGTB15N135IHRWG DISTI # 863-NGTB15N135IHRWG	ON Semiconductor	IGBT Transistors 1350V/15A RC IGBT FSII TO RoHS: Compliant	204	1:$3.8700 10:$3.2900 100:$2.8500 250:$2.7100 500:$2.4300
NGTB15N135IHRWG	ON Semiconductor		5	1:$3.4900 100:$2.6200 500:$2.2500 1000:$2.1000

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NGTB15N135IHRWG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes