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NGTB15N135IHRWG

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 0
1 Publication Order Number:
NGTB15N135IHR/D
NGTB15N135IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
Features
• Extremely Efficient Trench with Fieldstop Technology
• 1350 V Breakdown Voltage
• Optimized for Low Case Temperature in IH Cooker Application
• Reliable and Cost Effective Single Die Solution
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage V
CES
1350 V
Collector current
@ T
C = 25°C
@ TC = 100°C
I
C
30
15
A
Pulsed collector current, T
pulse
limited by T
Jmax
I
CM
60 A
Diode forward current
@ T
C = 25°C
@ TC = 100°C
I
F
30
15
A
Diode pulsed current, T
pulse
limited
by T
Jmax
I
FM
60 A
Gate−emitter voltage
Transient Gate−emitter Voltage
(T
pulse
= 5 ms, D < 0.10)
V
GE
$20
±25
V
Power Dissipation
@ T
C = 25°C
@ TC = 100°C
P
D
357
178
W
Operating junction temperature
range
T
J
−40 to +175 °C
Storage temperature range T
stg
−55 to +175 °C
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
TO−247
CASE 340AL
C
G
15 A, 1350 V
V
CEsat
= 2.15 V
E
off
= 0.42 mJ
E
Device Package Shipping
ORDERING INFORMATION
NGTB15N135IHRWG TO−247
(Pb−Free)
30 Units / Rail
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
15N135IHR
AYWWG
G
E
C
NGTB15N135IHRWG
http://onsemi.com
2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case
R
q
JC
0.42 °C/W
Thermal resistance junction−to−ambient
R
q
JA
40 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
GE
= 0 V, I
C
= 500 mA
V
(BR)CES
1350 − − V
Collector−emitter saturation voltage V
GE
= 15 V, I
C
= 15 A
V
GE
= 15 V, I
C
= 15 A, T
J
= 175°C
V
CEsat
−
−
2.15
2.25
2.65
−
V
Gate−emitter threshold voltage
V
GE
= V
CE
, I
C
= 250 mA
V
GE(th)
4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited
V
GE
= 0 V, V
CE
= 1350 V I
CES
− − 0.1 mA
Gate leakage current, collector−emitter
short−circuited
V
GE
= 20 V, V
CE
= 0 V I
GES
− − 100 nA
DYNAMIC CHARACTERISTIC
Input capacitance
V
CE
= 20 V, V
GE
= 0 V, f = 10 kHz
C
ies
− 3560 −
pF
Output capacitance C
oes
− 87 −
Reverse transfer capacitance C
res
− 68 −
Gate charge total
V
CE
= 600 V, I
C
= 15 A, V
GE
= 15 V
Q
g
− 156 −
nC
Gate to emitter charge Q
ge
− 27 −
Gate to collector charge Q
gc
− 70 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
T
J
= 25°C
V
CC
= 600 V, I
C
= 15 A
R
g
= 10 W
V
GE
= 0 V/ 15V
t
d(off)
− 170 −
ns
Fall time t
f
− 200 −
Turn−off switching loss E
off
− 0.42 − mJ
Turn−off delay time
T
J
= 150°C
V
CC
= 600 V, I
C
= 15 A
R
g
= 10 W
V
GE
= 0 V/ 15V
t
d(off)
− 190 −
ns
Fall time t
f
− 290 −
Turn−off switching loss E
off
− 0.95 − mJ
DIODE CHARACTERISTIC
Forward voltage
V
GE
= 0 V, I
F
= 15 A, T
J
= 25°C
V
GE
= 0 V, I
F
= 15 A, T
J
= 175°C
V
F
−
−
1.85
2.75
2.10
−
V
NGTB15N135IHRWG
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
76543210
0
10
20
30
40
50
60
76543210
0
10
20
30
40
50
60
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
GE
, GATE−EMITTER VOLTAGE (V)
76543210
0
10
20
30
40
50
60
108743210
0
10
20
30
40
50
60
Figure 5. V
CE(sat)
vs. T
J
Figure 6. Typical Capacitance
T
J
, JUNCTION TEMPERATURE (°C) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
17512510075250−50−75
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
907060503020100
1
10
100
1000
10,000
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
C, CAPACITANCE (pF)
8
T
J
= 25°C
11 V − 20 V
10 V
9 V
7 V
8 V
T
J
= 150°C
8
V
GE
= 11 V − 20 V
7 V
8 V
9 V
10 V
T
J
= −40°C
V
GE
= 11 V − 20 V
7 V
8 V
9 V
10 V
T
J
= 25°C
T
J
= 150°C
56 9 11
−25 50 150 200
I
C
= 30 A
I
C
= 15 A
I
C
= 5 A
T
J
= 25°C
40 80 100
C
ies
C
oes
C
res
8
P1-P3P4-P6P7-P9P10-P10

NGTB15N135IHRWG

Mfr. #:
Buy NGTB15N135IHRWG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1350V/15A RC IGBT FSII TO
Lifecycle:
New from this manufacturer.
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