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NGTB15N135IHRWG

P1-P3P4-P6P7-P9P10-P10
NGTB15N135IHRWG
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge
V
F
, FORWARD VOLTAGE (V) Q
G
, GATE CHARGE (nC)
3.02.52.01.51.00.50
0
10
20
30
40
50
60
70
1801401201006040200
0
2
4
6
10
12
14
16
Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature
T
J
, JUNCTION TEMPERATURE (°C) T
J
, JUNCTION TEMPERATURE (°C)
140120100806040200
0
0.2
0.4
0.6
0.8
1.0
1.2
140120100806040200
100
1000
Figure 11. Switching Loss vs. I
C
Figure 12. Switching Time vs. I
C
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
40353020151050
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
40353025151050
100
1000
I
F
, FORWARD CURRENT (A)
V
GE
, GATE−EMITTER VOLTAGE (V)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
T
J
= 25°C
T
J
= 150°C
80 160 200
8
V
CE
= 600 V
V
GE
= 15 V
I
C
= 15 A
160
V
CE
= 600 V
V
GE
= 15 V
I
C
= 15 A
Rg = 10 W
E
off
V
CE
= 600 V
V
GE
= 15 V
I
C
= 15 A
Rg = 10 W
160
t
d(off)
t
f
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
Rg = 10 W
E
off
25 45
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
Rg = 10 W
20 45
t
d(off)
t
f
NGTB15N135IHRWG
http://onsemi.com
5
TYPICAL CHARACTERISTICS
t
d(off)
E
off
Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg
Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W)
756555453525155
1.2
756555453525155
100
1000
Figure 15. Switching Loss vs. V
CE
Figure 16. Switching Time vs. V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
800700650600500450400350
0
0.2
0.4
0.6
0.8
1.0
1.2
800750700650550500450350
100
1000
Figure 17. Safe Operating Area Figure 18. I
C
vs. V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
1000100101
0.01
0.1
1
10
100
1000
10,0001000100101
1
10
100
1000
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 15 A
85
E
off
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 15 A
85
t
d(off)
t
f
V
GE
= 15 V
T
J
= 150°C
I
C
= 15 A
Rg = 10 W
550 750
V
GE
= 15 V
T
J
= 150°C
I
C
= 15 A
Rg = 10 W
600400
t
f
dc operation
1 ms
50 ms
100 ms
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated linearly
with increase in temperature
V
GE
= 15 V
T
C
= 125°C
1.1
0.8
0.6
0.4
0.2
0
NGTB15N135IHRWG
http://onsemi.com
6
TYPICAL CHARACTERISTICS
70
0.01
FREQUENCY (kHz)
Ipk (A)
0.1 1 10 100 1000
Figure 19. Collector Current vs. Switching
Frequency
T
C
= 110°C
T
C
= 80°C
60
50
40
30
20
10
0
V
CE
= 600 V, T
J
≤ 175°C, R
gate
= 10 W,
V
GE
= 0/15 V, T
case
= 80°C or 110°C
(as noted), D = 0.5
1750
−40
T
J
, JUNCTION TEMPERATURE (°C)
V
(BR)CES
(V)
Figure 20. Typical V
(BR)CES
vs. Temperature
13511085603510−15
1700
1650
1600
1550
1500
1450
1400
1350
Figure 21. IGBT Transient Thermal Impedance
ON−PULSE WIDTH (s)
0.10.0010.0001 0.010.00001 10.000001
0.0001
0.001
0.01
0.1
1
R(t), SQUARE−WAVE PEAK (°C/W)
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
R
q
JC
= 0.419
50% Duty Cycle
Single Pulse
20%
10%
5%
2%
P1-P3P4-P6P7-P9P10-P10

NGTB15N135IHRWG

Mfr. #:
Buy NGTB15N135IHRWG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1350V/15A RC IGBT FSII TO
Lifecycle:
New from this manufacturer.
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