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IPW65R190E6

IPW65R190E6
Mfr. #:
IPW65R190E6
Manufacturer:
Rochester Electronics, LLC
Description:
IGBT Transistors MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS E6
Lifecycle:
New from this manufacturer.
Datasheet:
IPW65R190E6 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
Series
CoolMOS E6
Packaging
Tube
Part-Aliases
IPW65R190E6FKSA1 IPW65R190E6XK SP000863906
Unit-Weight
1.340411 oz
Mounting-Style
Through Hole
Tradename
CoolMOS
Package-Case
TO-247-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
151 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
10 ns
Rise-Time
12 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
20.2 A
Vds-Drain-Source-Breakdown-Voltage
700 V
Rds-On-Drain-Source-Resistance
190 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
133 nS
Qg-Gate-Charge
73 nC
Tags
IPW65R19, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 700V 20.2A Automotive 3-Pin(3+Tab) TO-247 Tube
***ukat
N-Ch 650V 20,2A 151W 0,19R TO247
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Part # Mfg. Description Stock Price
IPW65R190E6
DISTI # 30577718		Infineon Technologies AGTrans MOSFET N-CH 700V 20.8A 3-Pin(3+Tab) TO-247
RoHS: Compliant		240
  • 100:$1.8487
  • 14:$1.8742
IPW65R190E6FKSA1
DISTI # IPW65R190E6FKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 20.2A TO247
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
    IPW65R190E6
    DISTI # IPW65R190E6    		Infineon Technologies AGTrans MOSFET N-CH 700V 20.8A 3-Pin TO-247 Tube - Bulk (Alt: IPW65R190E6)
    Min Qty: 188
    Container: Bulk    		Americas - 0
    • 1880:$1.5900
    • 564:$1.6900
    • 940:$1.6900
    • 376:$1.7900
    • 188:$1.8900
    IPW65R190E6FKSA1
    DISTI # IPW65R190E6FKSA1    		Infineon Technologies AG- Bulk (Alt: IPW65R190E6FKSA1)
    Min Qty: 169
    Container: Bulk    		Americas - 0
    • 1690:$1.7900
    • 507:$1.8900
    • 845:$1.8900
    • 338:$1.9900
    • 169:$2.0900
    IPW65R190E6
    DISTI # 726-IPW65R190E6    		Infineon Technologies AGMOSFET N-Ch 700V 20.2A TO247-3 CoolMOS E6
    RoHS: Compliant    		210
    • 1:$3.8300
    • 10:$3.2600
    • 100:$2.8200
    IPW65R190E6Infineon Technologies AGPower Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    RoHS: Compliant    		539
    • 1000:$1.7500
    • 500:$1.8400
    • 100:$1.9200
    • 25:$2.0000
    • 1:$2.1500
    IPW65R190E6FKSA1Infineon Technologies AGPower Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    RoHS: Compliant    		2400
    • 1000:$1.9500
    • 500:$2.0500
    • 100:$2.1300
    • 25:$2.2300
    • 1:$2.4000
    IPW65R190E6FKSA1
    DISTI # 8977649P    		Infineon Technologies AGMOSFET N-CH 700V 20.8A COOLMOS TO247, TU42
    • 150:£1.9400
    • 60:£2.0930
    • 30:£2.2430
    • 6:£2.4400
    IPW65R190E6FKSA1
    DISTI # IPW65R190E6    		Infineon Technologies AGN-Ch 650V 20,2A 151W 0,19R TO247
    RoHS: Compliant    		153
    • 1:€6.0300
    • 10:€3.0300
    • 50:€1.5300
    • 100:€1.4600
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    OMO.#: OMO-IPW65R080CFDFKSA2

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    Mfr.#: IPW65R280E6FKSA1

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    Mfr.#: IPW65R045C7

    OMO.#: OMO-IPW65R045C7-1190

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    IPW65R070C6FKSA1

    Mfr.#: IPW65R070C6FKSA1

    OMO.#: OMO-IPW65R070C6FKSA1-INFINEON-TECHNOLOGIES

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    IPW65R150CFDFKSA1

    Mfr.#: IPW65R150CFDFKSA1

    OMO.#: OMO-IPW65R150CFDFKSA1-INFINEON-TECHNOLOGIES

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    IPW65R190CFDAFKSA1

    Mfr.#: IPW65R190CFDAFKSA1

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    Availability
    Stock:
    Available
    On Order:
    4000
    Enter Quantity:
    Current price of IPW65R190E6 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.38
    $2.38
    10
    $2.27
    $22.66
    100
    $2.15
    $214.65
    500
    $2.03
    $1 013.65
    1000
    $1.91
    $1 908.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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