PartNumber | IPW65R019C7FKSA1 | IPW65R019C7 | IPW65R037C6 |
Description | MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7 | MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7 | MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | PG-TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
Id Continuous Drain Current | 75 A | 75 A | 83.2 A |
Rds On Drain Source Resistance | 19 mOhms | 19 mOhms | 33 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 2.5 V |
Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
Qg Gate Charge | 215 nC | 215 nC | 330 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 446 W | 446 W | 500 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Tube | Tube | Tube |
Height | 21.1 mm | 21.1 mm | 21.1 mm |
Length | 16.13 mm | 16.13 mm | 16.13 mm |
Series | CoolMOS C7 | CoolMOS C7 | CoolMOS C6 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.21 mm | 5.21 mm | 5.21 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 5 ns | 5 ns | 7 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 27 ns | 27 ns | 32 ns |
Factory Pack Quantity | 240 | 240 | 240 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 106 ns | 106 ns | 140 ns |
Typical Turn On Delay Time | 30 ns | 30 ns | 22 ns |
Part # Aliases | IPW65R019C7 SP000928646 | IPW65R019C7FKSA1 SP000928646 | IPW65R037C6FKSA1 IPW65R37C6XK SP000756284 |
Unit Weight | 1.340411 oz | 1.340411 oz | 1.340411 oz |