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IPW65R019C7

IPW65R019C7
Mfr. #:
IPW65R019C7
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7
Lifecycle:
New from this manufacturer.
Datasheet:
IPW65R019C7 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPW65R019C7 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
75 A
Rds On - Drain-Source Resistance:
19 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
215 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
446 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Height:
21.1 mm
Length:
16.13 mm
Series:
CoolMOS C7
Transistor Type:
1 N-Channel
Width:
5.21 mm
Brand:
Infineon Technologies
Fall Time:
5 ns
Product Type:
MOSFET
Rise Time:
27 ns
Factory Pack Quantity:
240
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
106 ns
Typical Turn-On Delay Time:
30 ns
Part # Aliases:
IPW65R019C7FKSA1 SP000928646
Unit Weight:
1.340411 oz
Tags
IPW65R01, IPW65R0, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Part # Mfg. Description Stock Price
IPW65R019C7FKSA1
DISTI # IPW65R019C7FKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 75A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 240:$19.5676
  • 10:$22.5820
  • 1:$24.2600
IPW65R019C7FKSA1
DISTI # IPW65R019C7FKSA1		Infineon Technologies AGTrans MOSFET N-CH 650(Min)V 75A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R019C7FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$14.5900
  • 480:$13.9900
  • 960:$13.4900
  • 1440:$13.0900
  • 2400:$12.7900
IPW65R019C7FKSA1
DISTI # IPW65R019C7		Infineon Technologies AGTrans MOSFET N-CH 650(Min)V 75A 3-Pin TO-247 Tube (Alt: IPW65R019C7)
RoHS: Compliant
Min Qty: 240
Container: Tube		Asia - 0
    IPW65R019C7FKSA1
    DISTI # SP000928646    		Infineon Technologies AGTrans MOSFET N-CH 650(Min)V 75A 3-Pin TO-247 Tube (Alt: SP000928646)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€17.8900
    • 5:€16.8300
    • 10:€15.7700
    • 50:€14.8300
    • 100:€13.8900
    • 250:€11.3300
    IPW65R019C7FKSA1
    DISTI # 52X6082    		Infineon Technologies AGMOSFET, N-CH, 650V, 75A, 150DEG C, 446W,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.017ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V RoHS Compliant: Yes0
    • 1:$23.1700
    • 10:$21.5700
    • 25:$20.7100
    • 50:$19.7500
    • 100:$18.7700
    • 250:$18.0200
    • 500:$17.2700
    IPW65R019C7FKSA1
    DISTI # 726-IPW65R019C7FKSA1    		Infineon Technologies AGMOSFET N-Ch 650V 75A TO247-3 CoolMOS C7
    RoHS: Compliant    		0
    • 1:$19.5900
    • 5:$19.3900
    • 10:$18.0700
    • 25:$17.2600
    • 100:$15.4300
    • 250:$14.7200
    • 500:$14.0100
    IPW65R019C7
    DISTI # 726-IPW65R019C7    		Infineon Technologies AGMOSFET N-Ch 650V 75A TO247-3 CoolMOS C7
    RoHS: Compliant    		0
    • 1:$19.5900
    • 5:$19.3900
    • 10:$18.0700
    • 25:$17.2600
    • 100:$15.4300
    IPW65R019C7FKSA1
    DISTI # 8977624    		Infineon Technologies AGMOSFET N-CHANNEL 700V 75A COOLMOS TO247, EA1
    • 1:£21.6000
    • 6:£19.8700
    • 15:£18.2800
    IPW65R019C7
    DISTI # TMOSP11034    		Infineon Technologies AGN-CH 650V 19mOhm 57,9A TO247-3
    RoHS: Compliant    		Stock DE - 0Stock US - 0
    • 240:$16.3400
    IPW65R019C7FKSA1Infineon Technologies AGINSTOCK130
      IPW65R019C7FKSA1
      DISTI # 2420490      		Infineon Technologies AGMOSFET, N-CH, 650V, 75A, TO-247-3
      RoHS: Compliant      		0
      • 1:$31.0000
      • 5:$30.6900
      • 10:$28.6000
      • 25:$27.3200
      • 100:$24.4200
      • 250:$23.2900
      • 500:$22.1700
      IPW65R019C7FKSA1
      DISTI # 2420490      		Infineon Technologies AGMOSFET, N-CH, 650V, 75A, TO-247-3
      RoHS: Compliant      		0
      • 1:£15.1500
      • 5:£14.9600
      • 10:£13.3200
      • 50:£12.6200
      • 100:£11.9100
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      Availability
      Stock:
      81
      On Order:
      2064
      Enter Quantity:
      Current price of IPW65R019C7 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $19.58
      $19.58
      5
      $19.38
      $96.90
      10
      $18.06
      $180.60
      25
      $17.25
      $431.25
      100
      $15.42
      $1 542.00
      250
      $14.71
      $3 677.50
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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