IPW65R048CFDAFKSA1

IPW65R048CFDAFKSA1
Mfr. #:
IPW65R048CFDAFKSA1
Manufacturer:
Infineon Technologies
Description:
RF Bipolar Transistors MOSFET N-Ch 650V 63.3A TO247-3
Lifecycle:
New from this manufacturer.
Datasheet:
IPW65R048CFDAFKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
IPW65R048CFDAFKSA1 more Information
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
Series
IPW65R048
Packaging
Tube
Part-Aliases
IPW65R048CFDA IPW65R048CFDAXK SP000895318
Unit-Weight
1.340411 oz
Tradename
CoolMOS
Package-Case
TO-247-3
Technology
Si
Number-of-Channels
1 Channel
Transistor-Type
1 N-Channel
Id-Continuous-Drain-Current
63.3 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Rds-On-Drain-Source-Resistance
48 mOhms
Transistor-Polarity
N-Channel
Tags
IPW65R048, IPW65R04, IPW65R0, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 650V 63.3A Automotive 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans MOSFET N-CH 650V 63.3A 3-Pin TO-247 Tube
***i-Key
MOSFET N-CH 650V TO-247-3
***ronik
CoolMOS 650V 63,3A 48mOhm TO247
***ark
Mosfet, N-Ch, Aec-Q101, 650V, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:63.3A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.043Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, AEC-Q101, 650V, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:63.3A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:500W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFDA Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, AEC-Q101 650V TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:63.3A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.043ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:500W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFDA Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPW65R048CFDAFKSA1
DISTI # V99:2348_06377781
Infineon Technologies AGTrans MOSFET N-CH 650V 63.3A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
210
  • 1:$12.5800
IPW65R048CFDAFKSA1
DISTI # IPW65R048CFDAFKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V TO-247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 240:$14.8291
  • 10:$17.2050
  • 1:$18.7900
IPW65R048CFDAFKSA1
DISTI # 32459098
Infineon Technologies AGTrans MOSFET N-CH 650V 63.3A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
210
  • 1:$12.5800
IPW65R048CFDAFKSA1
DISTI # IPW65R048CFDAFKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 63.3A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R048CFDAFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 240:$10.2900
  • 480:$9.8900
  • 960:$9.5900
  • 1440:$9.2900
  • 2400:$9.0900
IPW65R048CFDAFKSA1318
DISTI # IPW65R048CFDAFKSA1318
Infineon Technologies AG- Bulk (Alt: IPW65R048CFDAFKSA1318)
Min Qty: 69
Container: Bulk
Americas - 0
    IPW65R048CFDA
    DISTI # 726-IPW65R048CFDA
    Infineon Technologies AGMOSFET N-Ch 650V 63.3A TO247-3
    RoHS: Compliant
    5
    • 1:$15.1100
    • 10:$13.8900
    • 25:$13.3100
    • 100:$11.7300
    • 250:$11.1500
    • 500:$10.4300
    IPW65R048CFDAFKSA1
    DISTI # 726-IPW65R048CFDAFKS
    Infineon Technologies AGMOSFET N-Ch 650V 63.3A TO247-3
    RoHS: Compliant
    0
    • 1:$15.1100
    • 10:$13.8900
    • 25:$13.3100
    • 100:$11.7300
    • 250:$11.1500
    • 500:$10.4300
    IPW65R048CFDAFKSA1Infineon Technologies AGPower Field-Effect Transistor, 63.3A I(D), 650V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    RoHS: Compliant
    5
    • 1000:$8.6600
    • 500:$9.1100
    • 100:$9.4900
    • 25:$9.9000
    • 1:$10.6600
    IPW65R048CFDAFKSA1318Infineon Technologies AG 
    RoHS: Not Compliant
    2
    • 1000:$4.8200
    • 500:$5.0700
    • 100:$5.2800
    • 25:$5.5000
    • 1:$5.9300
    IPW65R048CFDAFKSA1
    DISTI # 2726079
    Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
    RoHS: Compliant
    0
    • 10:£10.7900
    • 5:£12.2600
    • 1:£12.6800
    Image Part # Description
    IPW65R048CFDA

    Mfr.#: IPW65R048CFDA

    OMO.#: OMO-IPW65R048CFDA

    MOSFET N-Ch 650V 63.3A TO247-3
    IPW65R048CFDAFKSA1

    Mfr.#: IPW65R048CFDAFKSA1

    OMO.#: OMO-IPW65R048CFDAFKSA1

    MOSFET N-Ch 650V 63.3A TO247-3
    IPW65R048CFDAFKSA1318

    Mfr.#: IPW65R048CFDAFKSA1318

    OMO.#: OMO-IPW65R048CFDAFKSA1318-1190

    - Bulk (Alt: IPW65R048CFDAFKSA1318)
    IPW65R048CFDA

    Mfr.#: IPW65R048CFDA

    OMO.#: OMO-IPW65R048CFDA-1190

    Trans MOSFET N-CH 650V 63.3A 3-Pin TO-247 Tube (Alt: SP003559142)
    IPW65R048CFDAFKSA1

    Mfr.#: IPW65R048CFDAFKSA1

    OMO.#: OMO-IPW65R048CFDAFKSA1-INFINEON-TECHNOLOGIES

    RF Bipolar Transistors MOSFET N-Ch 650V 63.3A TO247-3
    Availability
    Stock:
    Available
    On Order:
    2000
    Enter Quantity:
    Current price of IPW65R048CFDAFKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $13.64
    $13.64
    10
    $12.95
    $129.53
    100
    $12.27
    $1 227.15
    500
    $11.59
    $5 794.90
    1000
    $10.91
    $10 908.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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